Energy, Orientation, and Temperature Dependence of Defect Formation in Electron Irradiation of n‐Type Germanium

1959 ◽  
Vol 30 (8) ◽  
pp. 1300-1309 ◽  
Author(s):  
W. L. Brown ◽  
W. M. Augustyniak
Keyword(s):  
Temperature Dependence ◽  
Electron Irradiation ◽  
Defect Formation

Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons

2007 ◽  
Vol 556-557 ◽  
pp. 379-382 ◽  
Author(s):  
Hideharu Matsuura ◽  
Nobumasa Minohara ◽  
Yusuke Inagawa ◽  
Miyuki Takahashi ◽  
Takeshi Ohshima ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Electron Irradiation ◽  
Hole Concentration ◽  
The Relationship

From the temperature dependence of the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer irradiated with several fluences of 200 keV electrons, the density of Al acceptors with 0.2 V E + eV decreases significantly with increasing fluence, whereas the density of unknown defects with 0.37 V E + eV increases with fluence and then decreases slightly. Although only C vacancies increase with fluence because 200 keV electrons can displace only C atoms, only the increase in the density of C monovacancies cannot explain the changes of p(T) by 200 keV electron irradiation. It may be necessary to consider the relationship between C vacancies and Al acceptors.

Energy and Temperature Dependence of Electron Irradiation Damage in GaAs

1975 ◽  
Vol 22 (6) ◽  
pp. 2277-2282 ◽  
Author(s):  
A. H. Kalma ◽  
R. A. Berger ◽  
C. J. Fischer ◽  
B. A. Green
Keyword(s):  
Temperature Dependence ◽  
Electron Irradiation ◽  
Irradiation Damage
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