TEMPERATURE DEPENDENCE OF MICROWAVE EMISSION FROM INDIUM ANTIMONIDE

1967 ◽  
Vol 10 (12) ◽  
pp. 356-358 ◽  
Author(s):  
T. O. Poehler
Keyword(s):  
Temperature Dependence ◽  
Indium Antimonide ◽  
Microwave Emission

Microwave Emission fromn-Type Indium Antimonide at 4.2 and 77°K

1967 ◽  
Vol 19 (1) ◽  
pp. 24-27 ◽  
Author(s):  
G. Bekefi ◽  
A. Bers ◽  
S. R. J. Brueck
Keyword(s):  
Indium Antimonide ◽  
Microwave Emission

Low‐Field Microwave Emission from Indium Antimonide

1966 ◽  
Vol 37 (7) ◽  
pp. 2922-2924 ◽  
Author(s):  
A. G. Chynoweth ◽  
S. J. Buchsbaum ◽  
W. L. Feldmann
Keyword(s):  
Indium Antimonide ◽  
Microwave Emission ◽  
Low Field

Some ultrasonic attenuation measurements on indium antimonide and gallium arsenide

1970 ◽  
Vol 315 (1522) ◽  
pp. 369-379 ◽  
Keyword(s):  
Gallium Arsenide ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Indium Antimonide ◽  
Ultrasonic Attenuation ◽  
The Individual

Measurements have been made of the temperature dependence at 1 GHz of the ultrasonic attenuation of various modes in single crystals of n -type indium antimonide and gallium arsenide. The observed attenuation has been compared with predictions based on the work of Simons and Maris which takes into account the finite lifetime of the thermal phonons with which the ultrasonic phonons interact. The agreement obtained is in general acceptable, considering that in the treatment given, there are no adjustable parameters. Further experiments are suggested to identify the individual processes which are responsible for the attenuation. It is suggested that information concerning the lifetime of specific thermal modes may soon be available from such attenuation measurements.

Notizen: The Effect of Carrier Concentration on Microwave Emission from n-Type Indium Antimonide

1970 ◽  
Vol 25 (10) ◽  
pp. 1517-1518 ◽  
Author(s):  
W. A. Porter ◽  
D. K. Ferry
Keyword(s):  
Magnetic Field ◽  
Carrier Concentration ◽  
Field Dependence ◽  
Electric Fields ◽  
Indium Antimonide ◽  
Magnetic Field Dependence ◽  
Microwave Emission ◽  
The Magnetic Field

The effect of carrier concentration on the threshold for microwave emission from InSb was determined. Threshold electric fields are lower for higher concentrations and the magnetic field dependence is reduced.

Temperature dependence of Akhieser loss in indium antimonide

1979 ◽  
Vol 50 (6) ◽  
pp. 4065-4066 ◽  
Author(s):  
Manik Nandanpawar ◽  
S. Rajagopalan
Keyword(s):  
Temperature Dependence ◽  
Indium Antimonide
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