Errata: Use of Hot‐Wire Anemometer as a Triggering and Time Device in a Shock Tube

1955 ◽  
Vol 26 (9) ◽  
pp. 888-888
Author(s):  
Darshan S. Dosanjh
Keyword(s):  
Shock Tube ◽  
Hot Wire

Hot-wire method for measurements of turbulent mixing induced by Richtmyer-Meshkov instability in shock tube

Shock Waves ◽  
2001 ◽  
Vol 11 (3) ◽  
pp. 189-197 ◽  
Author(s):  
G. Jourdan ◽  
L. Schwaederlé ◽  
L. Houas ◽  
J.-F. Haas ◽  
A.N. Aleshin ◽  
...  
Keyword(s):  
Shock Tube ◽  
Turbulent Mixing ◽  
Hot Wire ◽  
Wire Method

Application of hot-wire anemometry in shock-tube flows

1995 ◽  
Vol 19 (1) ◽  
pp. 29-37 ◽  
Author(s):  
G. Briassulis ◽  
A. Honkan ◽  
J. Andreopoulos ◽  
C. B. Watkins
Keyword(s):  
Shock Tube ◽  
Hot Wire ◽  
Hot Wire Anemometry

Using a shock tube to predict the response of polymeric foam to a blast loading

2006 ◽  
Vol 134 ◽  
pp. 783-787 ◽  
Author(s):  
S. Ouellet ◽  
D. Frost ◽  
A. Bouamoul
Keyword(s):  
Shock Tube ◽  
Blast Loading ◽  
Polymeric Foam

Pyrolysis of methane in a single pulse shock tube

1972 ◽  
Vol 22 (3) ◽  
pp. 303-317 ◽  
Author(s):  
D. H. Napier ◽  
N. Subrahmanyam
Keyword(s):  
Shock Tube ◽  
Single Pulse

Characterization of Microcrystalline Transition from Amorphous Silicon as a Function of Hydrogen Dilution and Substrate Temperature of Hot-wire CVD

2002 ◽  
Vol 715 ◽  
Author(s):  
Keda Wang ◽  
Haoyue Zhang ◽  
Jian Zhang ◽  
Jessica M. Owens ◽  
Jennifer Weinberg-Wolf ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Sudden Change ◽  
Chemical Vapor ◽  
Threshold Value ◽  
Ir Absorption ◽  
Sudden Increase ◽  
Hot Wire ◽  
Hydrogen Dilution ◽  
Integral Absorption ◽  
Two Peaks

Abstracta-Si:H films were prepared by hot wire chemical vapor deposition. One group was deposited at a substrate temperature of Ts=250°C with varied hydrogen-dilution ratio, 0<R<10; the other group was deposited with fixed R=3 but a varied Ts from 150 to 550°C. IR, Raman and PL spectra were studied. The Raman results indicate that there is a threshold value for the microstructure transition from a- to μc-Si. The threshold is found to be R ≈ 2 at Ts = 250°C and Ts ≈ 200°C at R=3. The IR absorption of Si-H at 640 cm-1 was used to calculate the hydrogen content, CH. CH decreased monotonically when either R or Ts increased. The Si-H stretching mode contains two peaks at 2000 and 2090 cm-1. The ratio of the integral absorption peaks I2090/(I2090+I2090) showed a sudden increase at the threshold of microcrystallinity. At the same threshold, the PL features also indicate a sudden change from a- to μc-Si., i.e. the low energy PL band becomes dominant and the PL total intensity decreases. We attribute the above IR and PL changes to the contribution of microcrystallinity, especially the c-Si gain-boundaries.

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