Ferromagnetic Hall Effect at Optical Frequencies and Inner Effective Magnetic Field of Ferromagnetic Metals

1964 ◽  
Vol 35 (3) ◽  
pp. 1089-1092 ◽  
Author(s):  
G. S. Krinchik
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Effective Magnetic Field ◽  
Ferromagnetic Metals

Giant Ferromagnetic Hall Coefficient in La0.5Ca0.5CoO3

1997 ◽  
Vol 474 ◽  
Author(s):  
A. V. Samoilov ◽  
N. -C. Yeh ◽  
R. P. Vasquez
Keyword(s):  
Magnetic Field ◽  
Magnetic Properties ◽  
Hall Effect ◽  
Hall Coefficient ◽  
Single Phase ◽  
Anomalous Hall Effect ◽  
Convincing Evidence ◽  
Hall Probe ◽  
Ferromagnetic Metals ◽  
Percolation Behavior

ABSTRACTWe report the studies of the Hall effect and magnetic properties in La0.5Ca0.5CoO3 thin films and ceramics. We use the local Hall probe and SQUID magnetometers to measure the magnetization M of the samples. Both below and above the Curie temperature, the Hall resistivity pxy(H) is shown to be proportional to M(H) (H is the applied magnetic field). Thus, our results provide convincing evidence for the anomalous Hall effect in these cobaltites. The value of the anomalous Hall coefficient Rs in La0.5Ca0.5CoO3 significantly exceeds those of other known single-phase ferromagnetic metals. We suggest that the coexistence of high- and low-spin configurations in the perovskite cobaltites, which gives rise to magnetic percolation behavior in La1-xCax.CoO3,may be responsible for the giant Ra.

scholarly journals Oscillations of the degree of circular polarization in the optical spin Hall effect

2018 ◽  
Vol 60 (8) ◽  
pp. 1582
Author(s):  
D. Schmidt ◽  
B. Berger ◽  
M. Bayer ◽  
C. Schneider ◽  
S. Hofling ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Hall Effect ◽  
Momentum Space ◽  
Spin Hall Effect ◽  
Effective Magnetic Field ◽  
Exciton Polaritons ◽  
Semiconductor Microcavities ◽  
Space Dynamics ◽  
Good Agreement

AbstractThe optical spin Hall effect appears when elastically scattered exciton polaritons couple to an effective magnetic field inside of quantum wells in semiconductor microcavities. Theory predicts an oscillation of the pseudospin of the exciton polaritons in time. Here, we present a detailed analysis of momentum space dynamics of the exciton polariton pseudospin. Compared to what is predicted by theory, we find a higher modulation of the temporal oscillations of the pseudospin. We attribute the higher modulation to additional components of the effective magnetic field which have been neglected in the foundational theory of the optical spin Hall effect. Adjusting the model by adding non-linear polariton-polariton interactions, we find a good agreement in between the experimental results and simulations.

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals The quantum Hall effect in the absence of disorder

2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Kyung-Su Kim ◽  
Steven A. Kivelson
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Finite Interval ◽  
Quantum Hall ◽  
Wigner Crystal ◽  
Quasi Particle ◽  
Hall Conductance ◽  
Finite Extent

AbstractIt is widely held that disorder is essential to the existence of a finite interval of magnetic field in which the Hall conductance is quantized, i.e., for the existence of “plateaus” in the quantum Hall effect. Here, we show that the existence of a quasi-particle Wigner crystal (QPWC) results in the persistence of plateaus of finite extent even in the limit of vanishing disorder. Several experimentally detectable features that characterize the behavior in the zero disorder limit are also explored.

OBSERVATION OF THE TRANSVERSE STERN–GERLACH EFFECT IN NEUTRAL POTASSIUM

1967 ◽  
Vol 45 (4) ◽  
pp. 1481-1495 ◽  
Author(s):  
Myer Bloom ◽  
Eric Enga ◽  
Hin Lew
Keyword(s):  
Magnetic Field ◽  
Angular Velocity ◽  
Reference Frame ◽  
Inhomogeneous Magnetic Field ◽  
Time Dependent ◽  
Effective Magnetic Field ◽  
Classical Analysis ◽  
At Resonance ◽  
Rotating Reference Frame

A successful transverse Stern–Gerlach experiment has been performed, using a beam of neutral potassium atoms and an inhomogeneous time-dependent magnetic field of the form[Formula: see text]A classical analysis of the Stern–Gerlach experiment is given for a rotating inhomogeneous magnetic field. In general, when space quantization is achieved, the spins are quantized along the effective magnetic field in the reference frame rotating with angular velocity ω about the z axis. For ω = 0, the direction of quantization is the z axis (conventional Stern–Gerlach experiment), while at resonance (ω = −γH0) the direction of quantization is the x axis in the rotating reference frame (transverse Stern–Gerlach experiment). The experiment, which was performed at 7.2 Mc, is described in detail.

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

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