Narrow photoluminescence linewidth (<17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition

2004 ◽  
Vol 84 (15) ◽  
pp. 2817-2819 ◽  
Author(s):  
Tao Yang ◽  
Jun Tatebayashi ◽  
Shiro Tsukamoto ◽  
Masao Nishioka ◽  
Yasuhiko Arakawa
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