Effect of tungsten implantation on electron field emission properties of ion-beam-synthesized SiC layers

2004 ◽  
Vol 84 (16) ◽  
pp. 3193-3195 ◽  
Author(s):  
W. M. Tsang ◽  
S. P. Wong ◽  
J. K. N. Lindner
Keyword(s):  
Field Emission ◽  
Ion Beam ◽  
Electron Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Electron Field ◽  
Electron Field Emission Properties

Ain Thin Films Prepared by Reactive Ion Beam Coating

1999 ◽  
Vol 585 ◽  
Author(s):  
L. L. Cheng ◽  
Y H. Yu ◽  
B. Sundaravel ◽  
E. Z. Luo ◽  
S. Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Ion Beam ◽  
Wide Band ◽  
Electron Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Preparation Conditions ◽  
Electron Field ◽  
Electron Field Emission Properties

AbstractAluminum Nitride (AIN) is a promising material for a variety of technological applications because it has many exceptional properties, such as wide band gap (WBG) and negative electron affinity (NEA). AIN thin films were prepared by Reactive Ion Beam Coating. The properties of the AIN thin films may be a function of one of the preparation conditions: the beam energy. We used the non-Rutherford backscattering (non-RBS) and Auger Electron Spectroscopy (AES) results to analyze the composition of the AIN thin films. Atomic Force Microscopy (AFM) was applied to study the morphology of films. On the other hand, electron field emission properties were also studied to find the relationship between the compositional, morphological and electron field emission properties of the AIN thin films.

Field Enhancement Mechanisms and Electron Field Emission Properties of Ion Beam Synthesized and Modified SiC/Si Heterostructures

2002 ◽  
Vol 742 ◽  
Author(s):  
W. M. Tsang ◽  
S. P. Wong ◽  
J. K. N. Lindner
Keyword(s):  
Field Emission ◽  
Ion Beam ◽  
Field Enhancement ◽  
Ion Source ◽  
High Dose ◽  
Electron Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Electron Field ◽  
Electron Field Emission Properties

ABSTRACTSiC/Si heterostructures were synthesized by high dose carbon implantation into silicon using a metal vapor vacuum arc ion source. Their electron field emission properties were studied and correlated with results from other characterization techniques including atomic force microscopy (AFM), conducting AFM, Fourier transform infrared absorption spectroscopy, x-ray diffraction and photoelectron spectroscopy. It is clearly demonstrated that there are two types of field enhancement mechanisms responsible for the improvement of the electron field emission properties of these ion beam synthesized SiC/Si heterostructures, namely, the surface morphology effect and the local electrical inhomogeneity effect. The dependence of the FE properties on the carbon implant dose and thermal annealing conditions could be understood in terms of these two field enhancement mechanisms. It is also demonstrated that improvement in the FE properties can be achieved by implanting tungsten ions into these SiC/Si heterostructures.

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