Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

2004 ◽  
Vol 95 (10) ◽  
pp. 5905-5913 ◽  
Author(s):  
J. M. Hartmann ◽  
A. Abbadie ◽  
A. M. Papon ◽  
P. Holliger ◽  
G. Rolland ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Pressure Chemical ◽  
Thick Layers

Reduced Pressure - Chemical Vapor Deposition of Ge thick layers on Si(001) for microelectronics and optoelectronics purposes

2004 ◽  
Vol 809 ◽  
Author(s):  
J.M. Hartmann ◽  
A.M. Papon ◽  
P. Holliger ◽  
G. Rolland ◽  
T. Billon ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Root Mean Square Roughness ◽  
Threading Dislocation ◽  
Reduced Pressure ◽  
High Optical Quality ◽  
Pressure Chemical ◽  
Thick Layers

ABSTRACTGe-based photodetectors operating in the telecommunication wavelength range (1.3-1.6 μm) of silica fibers are highly desirable for the development of optical interconnections on SOI substrates. We have therefore investigated the structural and optical properties of Ge thick films grown directly onto Si(001) substrates using a production-compatible Reduced Pressure Chemical Vapor Deposition system. The thick Ge layers grown using a low-temperature / high temperature approach are in a definite tensile-strain configuration, with a threading dislocation density for as-grown layers of the order of 3×107 cm−2. The surface of those Ge thick layers is rather smooth, especially when considering the large lattice mismatch in-between Ge and Si. The root mean square roughness is indeed of the order of 2 nm only for as-grown layers. The layers produced are of high optical quality. An absorption coefficient α ≈10000 cm−1 @ 1.3μm (4500 cm−1 @ 1.55μm) has been found at room temperature for our Ge thick layers. A 30 meV bandgap shrinkage with respect to bulk Ge (0.77 eV ≎ 0.80 eV) is observed as well in those tensilestrained Ge epilayers.

Growth of Ge Thick Layers on Si(001) Substrates Using Reduced Pressure Chemical Vapor Deposition

2006 ◽  
Vol 45 (11) ◽  
pp. 8581-8585 ◽  
Author(s):  
Ji-Soo Park ◽  
Michael Curtin ◽  
Jie Bai ◽  
Mark Carroll ◽  
Anthony Lochtefeld
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Pressure Chemical ◽  
Thick Layers

scholarly journals Ge / SiGe Multi Quantum Well Fabrication by Using Reduced Pressure Chemical Vapor Deposition

2019 ◽  
Author(s):  
Y. Yamamoto ◽  
O. Skibitzki ◽  
M.A. Schubert ◽  
M. Scuderi ◽  
F. Reichmann ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Pressure Chemical ◽  
Multi Quantum Well

Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGK10
Author(s):  
Yuji Yamamoto ◽  
Oliver Skibitzki ◽  
Markus Andreas Schubert ◽  
Mario Scuderi ◽  
Felix Reichmann ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Reduced Pressure ◽  
Pressure Chemical

C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition

2016 ◽  
Vol 602 ◽  
pp. 24-28
Author(s):  
Yuji Yamamoto ◽  
Naofumi Ueno ◽  
Masao Sakuraba ◽  
Junichi Murota ◽  
Andreas Mai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Delta Doping ◽  
Pressure Chemical
Sign in / Sign up

Export Citation Format

Share Document