Space charge lens for focusing negative ion beam: Theory and experiment

2004 ◽  
Vol 75 (5) ◽  
pp. 1774-1776 ◽  
Author(s):  
I. A. Soloshenko ◽  
V. P. Goretsky ◽  
V. N. Gorshkov ◽  
A. M. Zavalov
2016 ◽  
Vol 87 (2) ◽  
pp. 02B917 ◽  
Author(s):  
E. Sartori ◽  
T. J. Maceina ◽  
P. Veltri ◽  
M. Cavenago ◽  
G. Serianni

2007 ◽  
Vol 33 (12) ◽  
pp. 1032-1037 ◽  
Author(s):  
V. N. Gorshkov ◽  
A. M. Zavalov ◽  
I. A. Soloshenko
Keyword(s):  
Ion Beam ◽  

2010 ◽  
Vol 81 (2) ◽  
pp. 02A724 ◽  
Author(s):  
K. Miyamoto ◽  
S. Wada ◽  
A. Hatayama

2002 ◽  
Vol 73 (3) ◽  
pp. 1161-1164 ◽  
Author(s):  
V. P. Goretsky ◽  
I. A. Soloshenko ◽  
A. I. Shchedrin
Keyword(s):  
Ion Beam ◽  

2003 ◽  
Vol 29 (6) ◽  
pp. 480-484
Author(s):  
A. M. Zavalov ◽  
V. N. Gorshkov ◽  
V. P. Goretskii ◽  
I. A. Soloshenko
Keyword(s):  
Ion Beam ◽  

2019 ◽  
Vol 65 (3) ◽  
pp. 278
Author(s):  
C. A. Valerio Lizarraga ◽  
C. Duarte-Galvan ◽  
I. Leon-Monzon ◽  
P. Villaseñor ◽  
And J. Aspiazu

To improve the beam brightness produced by a Source of Negative Ions by Cesium Sputtering we studied the beam generation in the 12~MeV Vandergraff linear accelerator at Instituto Nacional de Investigaciones Nucleares. Results of 3D particle tracking simulations of the ion source and beamline have been compared with measurements, with better agreement than traditional codes that only take into account the negative beam, and they determine a suppression in the Cs$^{+}$ production due to space charge, which in turn explains the intensity limits for negative beam production in both ionizers, and the best way to overpass them. Also, the beam dynamics variation due to the erosion of the target inside the cathode has been determined, helping to prevent beam losses and enhance the beam brightness.


Author(s):  
Cristhian A. Valerio-Lizarraga ◽  
Ildefonso Leon-Monzon ◽  
Richard Scrivens

2020 ◽  
Vol 91 (11) ◽  
pp. 113302
Author(s):  
H. Kaminaga ◽  
T. Takimoto ◽  
A. Tonegawa ◽  
K. N. Sato

2021 ◽  
Author(s):  
O. Sotnikov ◽  
A. Sanin ◽  
Yu. Belchenko ◽  
A. A. Ivanov ◽  
G. Abdrashitov ◽  
...  
Keyword(s):  
Ion Beam ◽  

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.


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