scholarly journals Comment on “Group-theoretical analysis of the electronic structure data for molecular ions C60N± (Ih) derived from multipole expansion of the Coulomb interelectronic interactions” [J. Chem. Phys. 119, 11429 (2003)]

2004 ◽  
Vol 120 (17) ◽  
pp. 8334-8334 ◽  
Author(s):  
A. V. Nikolaev ◽  
K. H. Michel
Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 286
Author(s):  
Valery Davydov ◽  
Evgenii Roginskii ◽  
Yuri Kitaev ◽  
Alexander Smirnov ◽  
Ilya Eliseyev ◽  
...  

We report the results of experimental and theoretical studies of phonon modes in GaN/AlN superlattices (SLs) with a period of several atomic layers, grown by submonolayer digital plasma-assisted molecular-beam epitaxy, which have a great potential for use in quantum and stress engineering. Using detailed group-theoretical analysis, the genesis of the SL vibrational modes from the modes of bulk AlN and GaN crystals is established. Ab initio calculations in the framework of the density functional theory, aimed at studying the phonon states, are performed for SLs with both equal and unequal layer thicknesses. The frequencies of the vibrational modes are calculated, and atomic displacement patterns are obtained. Raman spectra are calculated and compared with the experimental ones. The results of the ab initio calculations are in good agreement with the experimental Raman spectra and the results of the group-theoretical analysis. As a result of comprehensive studies, the correlations between the parameters of acoustic and optical phonons and the structure of SLs are obtained. This opens up new possibilities for the analysis of the structural characteristics of short-period GaN/AlN SLs using Raman spectroscopy. The results obtained can be used to optimize the growth technologies aimed to form structurally perfect short-period GaN/AlN SLs.


2016 ◽  
Vol 18 (46) ◽  
pp. 31973-31974 ◽  
Author(s):  
Mariana Derzsi ◽  
Wojciech Grochala

The recent article by Hou et al. has focused on a theoretical study of mixed valence compound AgO in order to elucidate the nature of the electronic structure of this system as a function of external pressure.


2008 ◽  
Vol 128 (3) ◽  
pp. 037101
Author(s):  
F. Schiller ◽  
M. Ruiz-Osés ◽  
J. E. Ortega ◽  
P. Segovia ◽  
J. Martínez-Blanco ◽  
...  

2019 ◽  
Vol 52 (4) ◽  
pp. 045201 ◽  
Author(s):  
Mohamed Farjallah ◽  
Dibyendu Sardar ◽  
Nayla El-Kork ◽  
Bimalendu Deb ◽  
Hamid Berriche

1999 ◽  
Vol 11 (25) ◽  
pp. L287-L293 ◽  
Author(s):  
N Börnsen ◽  
B Meyer ◽  
O Grotheer ◽  
M Fähnle

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