Role of attractive forces in self‐diffusion in dense Lennard‐Jones fluids

1973 ◽  
Vol 59 (7) ◽  
pp. 3732-3736 ◽  
Author(s):  
Joseph Kushick ◽  
Bruce J. Berne
Keyword(s):  
Self Diffusion ◽  
Lennard Jones

Diffusion Mechanisms in Sige Alloys

1999 ◽  
Vol 568 ◽  
Author(s):  
Arthur F.W. Willoughby ◽  
Janet M. Bonar ◽  
Andrew D.N. Paine
Keyword(s):  
Diffusion Processes ◽  
Dopant Diffusion ◽  
Elemental Silicon ◽  
Self Diffusion ◽  
Si Substrates ◽  
Marker Layer ◽  
Diffusion Mechanisms ◽  
Silicon And Germanium ◽  
Charged Defects

ABSTRACTInterest in diffusion processes in SiGe alloys arises from their potential in HBT's, HFET's, and optoelectronics devices, where migration over distances as small as a few nanometres can be significant. Successful modelling of these processes requires a much improved understanding of the mechanisms of self- and dopant diffusion in the alloy, although recent progress has been made. It is the purpose of this review to set this in the context of diffusion processes in elemental silicon and germanium, and to identify how this can help to elucidate behaviour in the alloy. Firstly, self diffusion processes are reviewed, from general agreement that self-diffusion in germanium is dominated by neutral and acceptor vacancies, to the position in silicon which is still uncertain. Germanium diffusion in silicon, however, appears to be via both vacancy and interstitial processes, and in the bulk alloy there is evidence for a change in dominant mechanism at around 35 percent germanium. Next, a review of dopant diffusion begins with Sb, which appears to diffuse in germanium by a mechanism similar to self-diffusion, and in silicon via monovacancies also, from marker layer evidence. In SiGe, the effects of composition and strain in epitaxial layers on Si substrates are also consistent with diffusion via vacancies, but questions still remain on the role of charged defects. The use of Sb to monitor vacancy effects such as grown-in defects by low temperature MBE, are discussed. Lastly, progress in assessing the role of vacancies and interstitials in the diffusion of boron is reviewed, which is dominated by interstitials in silicon-rich alloys, but appears to change to domination by vacancies at around 40 percent germanium, although studies in pure germanium are greatly needed.

Some Considerations on Confined Water: The Thermal Behavior of Transport Properties in Water-Glycerol and Water-Methanol Mixtures

MRS Advances ◽  
2016 ◽  
Vol 1 (26) ◽  
pp. 1891-1902 ◽  
Author(s):  
Francesco Mallamace ◽  
Carmelo Corsaro ◽  
Domenico Mallamace ◽  
Cirino Vasi ◽  
Sebastiano Vasi ◽  
...  
Keyword(s):  
Hydrophobic Interactions ◽  
Molar Fraction ◽  
Relaxation Times ◽  
Confined Water ◽  
Self Diffusion ◽  
Excess Value ◽  
Water Glycerol ◽  
System Properties ◽  
Dynamical Crossover

ABSTRACTWe discuss recent literature data on the relaxation times (the primary tα), viscosity, and self-diffusion in water-glycerol and water-methanol mixtures across a wide temperature range from the stable water phase to the deep supercooled regime (373–147K). In particular, to clarify the role of hydrophilicity interactions (the hydrogen bonds) and hydrophobic interactions we study the mixture in terms of the water molar fraction (XW) with fixed temperatures at 5K steps across the entire composition range, and we find a marked deviation from the ideal thermodynamic behavior of the transport functions. This deviation is strongly T and XW dependent and spans values that range from two orders of magnitude at the highest temperature to more than five in the deeply supercooled regime (more precisely, at ≃200K). We analyze these deviations in terms of how the measured values differ from ideal values and find that the hydrogen-bonding water network dominates system properties up to XW = 0.3. We also examine an Arrhenius plot of the maximum excess value (Δtα(T) vs. 1/T) and find two significant changes due to water: one at the dynamical crossover temperature (TL ≃ 225K, i.e., the locus of the Widom line), and one at T ≃ 315K (the water isothermal compressibility χT minimum).

Self Diffusion in SiC: the Role of Intrinsic Point Defects

2001 ◽  
Vol 353-356 ◽  
pp. 323-326 ◽  
Author(s):  
Alexander Mattausch ◽  
M. Bockstedte ◽  
Oleg Pankratov
Keyword(s):  
Point Defects ◽  
Intrinsic Point Defects ◽  
Self Diffusion

An Atomistic Simulation Study of the Role of Asperities and Indentations on Heterogeneous Bubble Nucleation

2008 ◽  
Vol 130 (4) ◽  
Author(s):  
Brian R. Novak ◽  
Edward J. Maginn ◽  
Mark J. McCready
Keyword(s):  
Heat Flux ◽  
Atomistic Simulation ◽  
Surface Defects ◽  
Constant Heat Flux ◽  
Bubble Nucleation ◽  
Nonequilibrium Molecular Dynamics ◽  
Lennard Jones ◽  
Dynamics Simulations ◽  
Fluid Interaction

Heterogeneous bubble nucleation was studied on surfaces having nanometer scale asperities and indentations as well as different surface-fluid interaction energies. Nonequilibrium molecular dynamics simulations at constant normal stress and either temperature or heat flux were carried out for the Lennard–Jones fluid in contact with a Lennard–Jones solid. When surface defects were of the same size or smaller than the estimated critical nucleus (the smallest nucleus whose growth is energetically favored) size of 1000–2000Å3, there was no difference between the defected surfaces and atomically smooth surfaces. On the other hand, surfaces with significantly larger indentations had nucleation rates that were about two orders of magnitude higher than the systems with small defects. Moreover, nucleation was localized in the large indentations. This localization was greatest under constant heat flux conditions and when the solid-fluid interactions were weak. The results suggest strategies for enhancing heterogeneous bubble nucleation rates as well as for controlling the location of nucleation events.

Sign in / Sign up

Export Citation Format

Share Document