Characteristic Energy Losses by Slow Electrons in Thin Films of Alkali Halides

1972 ◽  
Vol 57 (9) ◽  
pp. 3881-3887 ◽  
Author(s):  
Kenzo Hiraoka ◽  
William H. Hamill
Keyword(s):  
Thin Films ◽  
Alkali Halides ◽  
Energy Losses ◽  
Characteristic Energy ◽  
Slow Electrons

Characteristic energy losses in layered metallic thin films

1965 ◽  
Vol 3 (7) ◽  
pp. 133-136 ◽  
Author(s):  
William R. Miller ◽  
Norman N. Axelrod
Keyword(s):  
Thin Films ◽  
Energy Losses ◽  
Metallic Thin Films ◽  
Characteristic Energy

Characteristic energy losses of electrons in alloys

1963 ◽  
Vol 14 (2) ◽  
pp. 89-94 ◽  
Author(s):  
O Klemperer ◽  
J P G Shepherd
Keyword(s):  
Energy Losses ◽  
Characteristic Energy

scholarly journals Applications Aspects of the Diffusion of Slow Electrons in the Ionospheric Gases

2012 ◽  
Vol 9 (2) ◽  
pp. 341-351
Author(s):  
Baghdad Science Journal
Keyword(s):  
Electric Field ◽  
Collision Frequency ◽  
Mean Free Path ◽  
Uniform Electric Field ◽  
Mean Velocity ◽  
Pure Nitrogen ◽  
Characteristic Energy ◽  
Exchange Collision ◽  
Collisional Cross Section ◽  
Slow Electrons

The paper presents the results of precise of the calculations of the diffusion of slow electrons in ionospheric gases, such as, (Argon – Hydrogen mixture, pure Nitrogen and Argon – Helium – Nitrogen) in the presence of a uniform electric field and temperature 300 Kelvin. Such calculations lead to the value Townsend's energy coefficient (KT) as a function of E/P (electric field strength/gas pressure), electric field (E), electric drift velocity (Vd), momentum transfer collision frequency ( ), energy exchange collision frequency ( ) and characteristic energy (D/?). The following physical quantities are deduced as function s E/P: mean free path of the electrons at unit pressure, mean energy lost by an electron per collision, mean velocity of agitation and the collisional cross-section of the molecules. The results are presented graphically and in tabular form. This results appeared a good agreement with the experimental data.

Characteristic Energy Losses of Electrons in Carbon

1960 ◽  
Vol 31 (8) ◽  
pp. 1422-1426 ◽  
Author(s):  
Lewis B. Leder ◽  
J. A. Suddeth
Keyword(s):  
Energy Losses ◽  
Characteristic Energy

Electrical Properties of Nanostructure n-ZnSe/p-Si(100) Heterojunction Thin Film Diode

2018 ◽  
Vol 775 ◽  
pp. 246-253
Author(s):  
Ngamnit Wongcharoen ◽  
Thitinai Gaewdang
Keyword(s):  
Thin Films ◽  
Ideality Factor ◽  
Room Temperature ◽  
Energy Levels ◽  
Thermionic Emission ◽  
Depletion Region ◽  
Trap Level ◽  
Characteristic Energy ◽  
Znse Thin Films

The ZnSe/Si heterojunction is of specific interest since this structure provides effective solar cell and enables the integration of wide bandgap device in silicon circuits. It is known that the quality of the diode and the current transport mechanisms across the heterojunction may be greatly influenced by the quality of the interface and depends on the crystallinity of the film layer. In this work, n-ZnSe/p-Si (100) heterojunction was fabricated by thermal evaporating ZnSe thin films on p-Si (100) substrates. The current-voltage characteristics of n-ZnSe/p-Si (100) heterojunction were investigated in temperature range 20-300 K. Some important parameters such as barrier height, ideality factor and series resistance values evaluated by using thermionic emission (TE) theory and Cheung’s method at room temperature are n = 2.910,φB0= 0.832 eV and 8.59103Ω, respectively. The temperature dependence of the saturation current and ideality factor are well described by tunneling enhanced recombination at junction interface with activation energy and characteristic energy values about 1.293 eV and E00= 95 meV, respectively. The carrier concentration of ZnSe thin films about 3.16×1013cm-3was deduced from the C-V measurements at room temperature. Admittance spectroscopy was employed for analysis of the defect energy levels situated in depletion region. The results showed that there was a single trap level whose position in the band gap was close to 0.04 eV above valence band. The results of this work may be useful for application such as heterojunction solar cells.

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