Adsorption and Decomposition of Ammonia on a Polycrystalline Tungsten Filament

1970 ◽  
Vol 52 (9) ◽  
pp. 4877-4889 ◽  
Author(s):  
Kun‐Ichi Matsushita ◽  
Robert S. Hansen
Keyword(s):  
Tungsten Filament ◽  
Polycrystalline Tungsten

THE ADSORPTION AND REPLACEMENT OF HYDROGEN ON POLYCRYSTALLINE TUNGSTEN

1965 ◽  
Vol 43 (6) ◽  
pp. 1020-1035 ◽  
Author(s):  
L. J. Rlgby
Keyword(s):  
Carbon Monoxide ◽  
Second Order ◽  
Tungsten Filament ◽  
Α Phase ◽  
Polycrystalline Tungsten

Desorption spectra have been obtained which show that there are at least three β phases of hydrogen desorbed from a tungsten filament. The β2 phase was desorbed with second-order kinetics. The replacement of hydrogen by nitrogen and by carbon monoxide was observed, and simple replacement mechanisms are proposed for these processes and the replacement of carbon monoxide by nitrogen. When carbon was preadsorbed on the surface, the β1 phase of hydrogen and all the β phases of carbon monoxide and nitrogen were reduced, but the α phase of carbon monoxide was increased. A concept of identical and nonidentical sites is introduced to explain these results.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

A New High Intensity Grid Cap for RCA-EMU-3 Electron Microscopes

1968 ◽  
Vol 26 ◽  
pp. 316-317
Author(s):  
George Christov ◽  
Bolivar J. Lloyd
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
High Voltage ◽  
High Intensity ◽  
Electron Gun ◽  
Tungsten Filament ◽  
Fluorescent Screen ◽  
Electron Microscopes ◽  
Pass Through ◽  
Ground Potential

A new high intensity grid cap has been designed for the RCA-EMU-3 electron microscope. Various parameters of the new grid cap were investigated to determine its characteristics. The increase in illumination produced provides ease of focusing on the fluorescent screen at magnifications from 1500 to 50,000 times using an accelerating voltage of 50 KV.The EMU-3 type electron gun assembly consists of a V-shaped tungsten filament for a cathode with a thin metal threaded cathode shield and an anode with a central aperture to permit the beam to course the length of the column. The cathode shield is negatively biased at a potential of several hundred volts with respect to the filament. The electron beam is formed by electrons emitted from the tip of the filament which pass through an aperture of 0.1 inch diameter in the cap and then it is accelerated by the negative high voltage through a 0.625 inch diameter aperture in the anode which is at ground potential.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

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