Collision Broadening of Rotational Absorption Lines. V. Pressure Broadening of Microwave Absorption Spectra Involving Asymmetric‐Top Molecules

1969 ◽  
Vol 51 (9) ◽  
pp. 3891-3901 ◽  
Author(s):  
Joseph S. Murphy ◽  
James E. Boggs
Keyword(s):  
Microwave Absorption ◽  
Absorption Spectra ◽  
Absorption Lines ◽  
Pressure Broadening ◽  
Collision Broadening ◽  
Asymmetric Top

OPTICAL ABSORPTION SPECTRA OF ARSENIC AND PHOSPHORUS IN SILICON

1962 ◽  
Vol 40 (10) ◽  
pp. 1480-1489 ◽  
Author(s):  
J. W. Bichard ◽  
J. C. Giles
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Excited States ◽  
Ground State ◽  
Absorption Lines ◽  
Full Width ◽  
Optical Absorption Spectra ◽  
Phosphorus Impurity ◽  
Line Widths ◽  
Phosphorus In Silicon

The optical absorption spectra of arsenic and phosphorus donor impurities in silicon have been studied under conditions of improved resolution. Absorption lines due to transitions from the impurity ground state to the excited states 2p0, 2p±, 3p0, 3p±, 4p0, 4 p±, and 5p0, and 5p± have been observed at 4.2° K. The relative intensities of some of these absorption lines are compared with existing experimental and theoretical estimates. The contribution of instrumental broadening to the observed line widths is assessed and natural line widths are estimated. The estimates indicate values for the natural line widths which are much less than those previously reported. For phosphorus impurity, the natural line widths are estimated to be less than 0.08 × 10−3 electron volts full width at half-maximum. The possibility of concentration broadening is discussed in connection with the arsenic data.

The absorption spectra of irradiated diamonds after heat treatment

1956 ◽  
Vol 237 (1208) ◽  
pp. 75-89 ◽  
Keyword(s):  
Absorption Spectra ◽  
Absorption Lines ◽  
Type I ◽  
Type Ii ◽  
Large Reduction ◽  
Isothermal Heating ◽  
Interstitial Carbon ◽  
Crystal Imperfections ◽  
Continuous Absorption ◽  
Kinetics Of

The absorption spectra of eight type I and three type II a diamonds irradiated with neutrons, electrons or y-rays have been recorded at 80 and 290°K after various heat treatments in the temperature range 0 to 900°C. It is found that heating in the range 350 to 450°C causes a general reduction in the irradiation-induced absorption owing to the recombination of those interstitials and vacancies which are near neighbours. Heating type II a diamonds at 600°C causes a large reduction in the irradiation-induced lines and new lines appear. These are probably due to pairs of identical defects, and the kinetics of their formation during isothermal heating at 600°C are presented. At higher temperatures all absorption lines in type II a diamonds disappear and only continuous absorption remains. This is probably due to amorphous or graphitic regions produced by agglomeration of defects. Type I diamonds show the same kind of absorption, but in addition show an increase in strength of the natural lines and also some new absorption lines which are not removed by heating at 900°C. It is suggested that these additional processes are due to the anchoring of vacant atomic sites and interstitial carbon atoms at crystal imperfections present only in type I diamonds.

Bond Distances in OCS from Microwave Absorption Lines

1947 ◽  
Vol 71 (9) ◽  
pp. 640-641 ◽  
Author(s):  
T. W. Dakin ◽  
W. E. Good ◽  
D. K. Coles
Keyword(s):  
Microwave Absorption ◽  
Absorption Lines
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