Absolute Seebeck coefficient of platinum from 80 to 340 K and the thermal and electrical conductivities of lead from 80 to 400 K

1973 ◽  
Vol 44 (3) ◽  
pp. 1174-1178 ◽  
Author(s):  
J. P. Moore ◽  
R. S. Graves
Keyword(s):  
Seebeck Coefficient ◽  
Electrical Conductivities ◽  
Absolute Seebeck Coefficient

Critical role of nanoinclusions in silver selenide nanocomposites as a promising room temperature thermoelectric material

2019 ◽  
Vol 7 (9) ◽  
pp. 2646-2652 ◽  
Author(s):  
Khak Ho Lim ◽  
Ka Wai Wong ◽  
Yu Liu ◽  
Yu Zhang ◽  
Doris Cadavid ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Room Temperature ◽  
Opposite Effect ◽  
Critical Role ◽  
Free Carrier ◽  
Silver Selenide ◽  
Band Bending ◽  
Seebeck Coefficients ◽  
Electrical Conductivities

The introduction of nonmetal nanoinclusions within Ag2Se results in an interphase band bending that promotes electron filtering and increase Seebeck coefficient. Similar loading of metal nanoinclusions provided an opposite effect-modulating free carrier concentration, as characterized by superior electrical conductivities and lower Seebeck coefficients.

High-temperature thermoelectric properties of W-substituted CaMnO3

2013 ◽  
Vol 1490 ◽  
pp. 3-8 ◽  
Author(s):  
Dimas S. Alfaruq ◽  
James Eilertsen ◽  
Philipp Thiel ◽  
Myriam H Aguirre ◽  
Eugenio Otal ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Soft Chemistry ◽  
Absolute Seebeck Coefficient

AbstractThe thermoelectric properties of W-substituted CaMn1-xWxO3-δ (x = 0.01, 0.03; 0.05) samples, prepared by soft chemistry, were investigated from 300 K to 1000 K and compared to Nb-substituted CaMn0.98Nb0.02O3-δ. All compositions exhibit both an increase in absolute Seebeck coefficient and electrical resistivity with temperature. Moreover, compared to the Nb-substituted sample, the thermal conductivity of the W-substituted samples was strongly reduced. This reduction is attributed to the nearly two times greater mass of tungsten. Consequently, a ZT of 0.19 was found in CaMn0.97W0.03O3-δ at 1000 K, which was larger than ZT exhibited by the 2% Nb-doped sample.

scholarly journals Nanometrology: Absolute Seebeck coefficient of individual silver nanowires

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
M. Kockert ◽  
D. Kojda ◽  
R. Mitdank ◽  
A. Mogilatenko ◽  
Z. Wang ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Bulk Material ◽  
Silver Nanowires ◽  
Mean Free Path ◽  
Phonon Drag ◽  
Nanowire Diameter ◽  
The Absolute ◽  
Electron Mean Free Path ◽  
Absolute Seebeck Coefficient

AbstractThermoelectric phenomena can be strongly modified in nanomaterials. The determination of the absolute Seebeck coefficient is a major challenge for metrology with respect to micro- and nanostructures due to the fact that the transport properties of the bulk material are no more valid. Here, we demonstrate a method to determine the absolute Seebeck coefficient S of individual metallic nanowires. For highly pure and single crystalline silver nanowires, we show the influence of nanopatterning on S in the temperature range between 16 K and 300 K. At room temperature, a nanowire diameter below 200 nm suppresses S by 50% compared to the bulk material to less than S = 1 μVK−1, which is attributed to the reduced electron mean free path. The temperature dependence of the absolute Seebeck coefficient depends on size effects. Thermodiffusion and phonon drag are reduced with respect to the bulk material and the ratio of electron-phonon to phonon-phonon interaction is significantly increased.

Silicide/Silicon Hetero-Junction Structure for Thermoelectric Applications

2015 ◽  
Vol 15 (10) ◽  
pp. 7472-7475 ◽  
Author(s):  
Dongsuk Jun ◽  
Soojung Kim ◽  
Wonchul Choi ◽  
Junsoo Kim ◽  
Taehyoung Zyung ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Electrical Energy ◽  
Multilayered Structure ◽  
Thermoelectric Device ◽  
Cmos Process ◽  
Platinum Silicide ◽  
Seebeck Coefficients ◽  
Heating And Cooling ◽  
Electrical Conductivities

We fabricated silicide/silicon hetero-junction structured thermoelectric device by CMOS process for the reduction of thermal conductivity with the scatterings of phonons at silicide/silicon interfaces. Electrical conductivities, Seebeck coefficients, power factors, and temperature differences are evaluated using the steady state analysis method. Platinum silicide/silicon multilayered structure showed an enhanced Seebeck coefficient and power factor characteristics, which was considered for p-leg element. Also, erbium silicide/silicon structure showed an enhanced Seebeck coefficient, which was considered for an n-leg element. Silicide/silicon multilayered structure is promising for thermoelectric applications by reducing thermal conductivity with an enhanced Seebeck coefficient. However, because of the high thermal conductivity of the silicon packing during thermal gradient is not a problem any temperature difference. Therefore, requires more testing and analysis in order to overcome this problem. Thermoelectric generators are devices that based on the Seebeck effect, convert temperature differences into electrical energy. Although thermoelectric phenomena have been used for heating and cooling applications quite extensively, it is only in recent years that interest has increased in energy generation.

Bipolar Electrical Conductive Transparent Oxide, CuInO2

2001 ◽  
Vol 666 ◽  
Author(s):  
Hiroshi Yanagi ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Single Crystal ◽  
Film Deposition ◽  
Oxide Semiconductor ◽  
Positive Sign ◽  
Delafossite Structure ◽  
Electrical Conductivities ◽  
Transparent Oxide ◽  
Type Conduction

ABSTRACTA transparent oxide semiconductor with delafossite structure, CuInO2, was found to exhibit both p-type and n-type conduction by doping of an appropriate impurity and tuning of proper film-deposition conditions. Thin films of Ca-doped or Sn-doped CuInO2 were prepared on -Al2O3 (001) single crystal substrates by pulsed laser deposition method. The films were deposited at 723 K in O2 atmosphere of 1.0 Pa for the Ca-doped films or 1.5 Pa for the Sn-doped films. The positive sign of the Seebeck coefficient demonstrated p-type conduction in the Ca-doped films, while the Seebeck coefficient of the Sn-doped films was negative indicating n-type conductivity. The electrical conductivities of Ca-doped and Sn-doped CuInO2 thin films were 2.8×10−3 S·cm−1 and 3.8×10−3 S·cm−1, respectively, at 300 K. The optical band gap of each film was estimated to be ∼3.9 eV. Since CuInO2 exhibited bipolarity in electrical conduction, transparent p-n homojunctions based on CuInO2 were fabricated on (111) surface of yttria-stabilized zirconia single-crystal substrates. The structure of the diode was In2O3:Sn / n-CuInO2:Sn / p-CuInO2:Ca / In2O3:Sn electrode on the substrate. The contact between the n-and p-type CuInO2 semiconducting oxides was found to be rectifying. The turn-on voltage was ∼1.8 V.

scholarly journals Absolute Seebeck coefficient of thin platinum films

2019 ◽  
Vol 126 (10) ◽  
pp. 105106 ◽  
Author(s):  
M. Kockert ◽  
R. Mitdank ◽  
A. Zykov ◽  
S. Kowarik ◽  
S. F. Fischer
Keyword(s):  
Seebeck Coefficient ◽  
Thin Platinum ◽  
Absolute Seebeck Coefficient

Seebeck Coefficient of Heavily Doped Polycrystalline 3C-SiC Deposited by LPCVD

2012 ◽  
Vol 717-720 ◽  
pp. 541-544 ◽  
Author(s):  
Man I. Lei ◽  
Mehran Mehregany
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Ambient Temperature ◽  
Temperature Increase ◽  
Room Temperature ◽  
Test Structure ◽  
Nitrogen Doped ◽  
Heavily Doped ◽  
The Absolute ◽  
Absolute Seebeck Coefficient

The Seebeck coefficient of heavily-nitrogen-doped n-type polycrystalline 3C-SiC (n-SiC) and platinum (Pt) thin films has been measured from room temperature up to 300 °C by using a microfabricated test structure. At room temperature, the absolute Seebeck coefficient of the n-SiC is -10 μV/°C. With ambient temperature increase, the absolute Seebeck coefficient of the n-SiC is found to gradually increase, reaching -20 μV/°C at 300 °C.

Sign in / Sign up

Export Citation Format

Share Document