Resistivity study of single‐crystal silver films from 4.2 to 56°K

1973 ◽  
Vol 44 (10) ◽  
pp. 4501-4504 ◽  
Author(s):  
V. P. Nagpal ◽  
V. P. Duggal
2019 ◽  
Vol 7 (6) ◽  
pp. 1720-1725 ◽  
Author(s):  
Qingzhi Chen ◽  
Jay A. Switzer

Silver films were deposited epitaxially for the first time onto low-index, single-crystal silicon wafers through an electrochemical method in an aqueous silver acetate bath.


1965 ◽  
Vol 6 (2) ◽  
pp. 30-32 ◽  
Author(s):  
D. C. Larson ◽  
R. V. Coleman ◽  
B. T. Boiko
Keyword(s):  

2007 ◽  
Vol 21 (11) ◽  
pp. 675-678 ◽  
Author(s):  
S. ARIPONNAMMAL ◽  
R. SELVA VENNILA ◽  
S. RADHIKA ◽  
P. M. USHASREE

Zinc thiourea chloride (ZTC) crystals were crystallized by slow evaporation technique. The lattice parameters of the grown crystals were determined by angle dispersive X-ray powder diffraction technique (XRD) and the structure was confirmed. High pressure electrical resistivity study was carried out on this crystal and the results are reported here.


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