scholarly journals Radiation‐Induced Precipitation in Silicon During High‐Voltage Electron Microscope Observation

1971 ◽  
Vol 42 (9) ◽  
pp. 3559-3561 ◽  
Author(s):  
E. Nes ◽  
J. Washburn
Keyword(s):  
Electron Microscope ◽  
High Voltage ◽  
Microscope Observation ◽  
Electron Microscope Observation ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Radiation Induced

scholarly journals Direct Observation of Radiation Induced Precipitation in High Voltage Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 266-267
Author(s):  
Wei-Kuo Wu ◽  
Jack Washburn
Keyword(s):  
Electron Microscope ◽  
High Voltage ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Two Samples ◽  
Radiation Induced ◽  
Long Rod ◽  
Ion Implanted

Long needle-shaped radiation induced precipitates oriented along <110> directions were first reported by Nes and Washburn from observation using hot stage high voltage electron microscopy. Similar long rod-like defects have also been observed in boron ion implanted silicon.Our recent results show that most long rod-like defects formed during postimplantation annealing of boron ion implanted silicon are boron precipitates. The cause for the formation of these long rod-like defects is assumed to be replacement of substitutional boron by silicon selfinterstitials.To substantiate this mechanism two samples were irradiated in the high voltage electron microscope. Sample A was a boron doped <111> oriented silicon of resistivity 0.75 Ω-cm (2.5x10l6 B/cm3) and sample B was phosphorous doped, of resistivity 2 Ω-cm (2.7x10l5 p/cm3).Figure 1 shows the sequential development of long rod-like defects in sample A held at 620°C during irradiation with 650 keV electrons.

In situ examination of radiation-induced internal stress relaxation in the column of a high-voltage electron microscope

1984 ◽  
Vol 56 (3) ◽  
pp. 147-150 ◽  
Author(s):  
I. I. Novikov ◽  
V. A. Ermishkin ◽  
V. G. Zharkov ◽  
E. N. Samoilov ◽  
I. S. Lupakov ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Stress Relaxation ◽  
Internal Stress ◽  
High Voltage ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Radiation Induced ◽  
In Situ Examination

A New 1,000 kV Electron Microscope

1967 ◽  
Vol 25 ◽  
pp. 260-261
Author(s):  
M. Nishigaki ◽  
S. Katagiri ◽  
H. Kimura ◽  
B. Tadano
Keyword(s):  
Electron Microscope ◽  
High Voltage ◽  
Basic Research ◽  
Chromatic Aberration ◽  
High Accuracy ◽  
Biological Specimen ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron

The high voltage electron microscope has many advantageous features in comparison with the ordinary electron microscope. They are a higher penetrating efficiency of the electron, low chromatic aberration, high accuracy of the selected area diffraction and so on. Thus, the high voltage electron microscope becomes an indispensable instrument for the metallurgical, polymer and biological specimen studies. The application of the instrument involves today not only basic research but routine survey in the various fields. Particularly for the latter purpose, the performance, maintenance and reliability of the microscope should be same as those of commercial ones. The authors completed a 500 kV electron microscope in 1964 and a 1,000 kV one in 1966 taking these points into consideration. The construction of our 1,000 kV electron microscope is described below.

Design of Sensitive Photographic Materials for the High-Voltage Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 156-157
Author(s):  
Murray Vernon King ◽  
Donald F. Parsons
Keyword(s):  
Electron Microscope ◽  
Radiation Damage ◽  
High Voltage ◽  
Radiation Sensitivity ◽  
Fast Electrons ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Biological Studies ◽  
Low Sensitivity

Effective application of the high-voltage electron microscope to a wide variety of biological studies has been restricted by the radiation sensitivity of biological systems. The problem of radiation damage has been recognized as a serious factor influencing the amount of information attainable from biological specimens in electron microscopy at conventional voltages around 100 kV. The problem proves to be even more severe at higher voltages around 1 MV. In this range, the problem is the relatively low sensitivity of the existing recording media, which entails inordinately long exposures that give rise to severe radiation damage. This low sensitivity arises from the small linear energy transfer for fast electrons. Few developable grains are created in the emulsion per electron, while most of the energy of the electrons is wasted in the film base.

In-situ electrical-resistivity measurements in the high-voltage electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 68-69
Author(s):  
W. E. King
Keyword(s):  
Electrical Resistivity ◽  
Electron Microscope ◽  
High Voltage ◽  
Resistivity Measurements ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Wide Range ◽  
Helium Gas

A side-entry type, helium-temperature specimen stage that has the capability of in-situ electrical-resistivity measurements has been designed and developed for use in the AEI-EM7 1200-kV electron microscope at Argonne National Laboratory. The electrical-resistivity measurements complement the high-voltage electron microscope (HVEM) to yield a unique opportunity to investigate defect production in metals by electron irradiation over a wide range of defect concentrations.A flow cryostat that uses helium gas as a coolant is employed to attain and maintain any specified temperature between 10 and 300 K. The helium gas coolant eliminates the vibrations that arise from boiling liquid helium and the temperature instabilities due to alternating heat-transfer mechanisms in the two-phase temperature regime (4.215 K). Figure 1 shows a schematic view of the liquid/gaseous helium transfer system. A liquid-gas mixture can be used for fast cooldown. The cold tip of the transfer tube is inserted coincident with the tilt axis of the specimen stage, and the end of the coolant flow tube is positioned without contact within the heat exchanger of the copper specimen block (Fig. 2).

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