Negative Differential Conductivity Due to Electrothermal Instabilities in Thin Amorphous Films

1971 ◽  
Vol 42 (12) ◽  
pp. 5131-5136 ◽  
Author(s):  
A. H. M. Shousha
2007 ◽  
Vol 17 (01) ◽  
pp. 173-176 ◽  
Author(s):  
BARBAROS ASLAN ◽  
LESTER F. EASTMAN ◽  
WILLIAM J. SCHAFF ◽  
XIAODONG CHEN ◽  
MICHAEL G. SPENCER ◽  
...  

We present the experimental development and characterization of GaN ballistic diodes for THz operation. Fabricated devices have been described and gathered experimental data is discussed. The major problem addressed is the domination of the parasitic resistances which significantly reduce the accelerating electric field across the ballistic region (intrinsic layer).


Sign in / Sign up

Export Citation Format

Share Document