Activation‐Energy Spectra for Retraction of Hot‐Stretched Polystyrene and Shear Creep in Polymethyl Methacrylate

1971 ◽  
Vol 42 (12) ◽  
pp. 4926-4930 ◽  
Author(s):  
R. M. Kimmel ◽  
D. R. Uhlmann
1983 ◽  
Vol 18 (1) ◽  
pp. 278-288 ◽  
Author(s):  
M. R. J. Gibbs ◽  
J. E. Evetts ◽  
J. A. Leake

2001 ◽  
Author(s):  
F. Hua ◽  
C. M. Garner ◽  
H. G. Song ◽  
J. W. Morris

Abstract This study reports results of shear creep behavior of four Pb-free solders, Sn-3Ag-0.5Cu, Sn-3.5Ag, Sn-0.7Cu and Sn-10In-3.1Ag at 95θC and 130θC. At the stress levels tested, all the four solders showed the stress components close or larger than 5, typical for matrix creep. The calculated activation energies for Sn-0.7Cu, Sn-3.5Ag and Sn-3Ag-0.5Cu are from 103kJ/mol to 117kJ/mol, which are very close to the pure Sn self-diffusion activation energy (107kJ/mol). It suggested that the creep process is controlled by Sn bulk self-diffusion rate. The creep activation energy for Sn-10In-3.1Ag is higher in the range of 173–193kJ/mol. The Sn-0.7Cu, Sn-3Ag-0.5Cu and Sn-10In-3.1Ag solder joints were also prepared with two different cooling rates, 3.5θC/min. (furnace-cooling) and 2.7θC/S (air-cooling) and tested at 130θC. It was observed that faster cooled solder joints have faster creep strain rates than slower cooled solder joints at the stress levels tested for all three solders, due to the fine and even distribution of intermetallic particles.


Open Physics ◽  
2003 ◽  
Vol 1 (2) ◽  
Author(s):  
Arseniy Gumenjuk ◽  
Sergiy Kutovyi

AbstractThe energy spectra of traps in NaCl crystals have been studied in detail by the method of thermoluminescence. Crystals of NaCl were undoped but treated thermally in different ways. The activation energies of traps form a single oscillator series, E n=ℏωTL(n+1/2), ℏωTL=903 cm-1. Contrary to other previously studied crystals with complex lattices, the corresponding line ℏωRam=ℏωTL was not found in Raman spectra of NaCl. It is assumed that the oscillator rule is governed by the polaron nature of traps. The trap activation energy is determined by the vibration level from which the transition of the charge carrier to the excited luminescence centre is made possible and depends on the distance between these centres.


1988 ◽  
Vol 97 ◽  
pp. 545-547 ◽  
Author(s):  
W. De Ceuninck ◽  
Zhao Ruyan ◽  
G. Knuyt ◽  
L. De Schepper ◽  
L.M. Stals

2018 ◽  
Vol 35 (4) ◽  
pp. 047901
Author(s):  
Ming Weng ◽  
Wan Liu ◽  
Ming Yin ◽  
Fang Wang ◽  
Meng Cao

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