Charge‐Carrier Capture and Its Effect on Transition Capacitance in GaP–Cu Diodes

1969 ◽  
Vol 40 (6) ◽  
pp. 2526-2533 ◽  
Author(s):  
H. G. Grimmeiss ◽  
G. Olofsson
Keyword(s):  
Charge Carrier ◽  
Carrier Capture ◽  
Charge Carrier Capture

Direct observation of charge-carrier capture in an array of self-assembled InAs/GaAs quantum dots

2007 ◽  
Vol 71 (1) ◽  
pp. 106-108 ◽  
Author(s):  
V. I. Zubkov ◽  
I. S. Shulgunova ◽  
A. V. Solomonov ◽  
M. Geller ◽  
A. Marent ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Charge Carrier ◽  
Direct Observation ◽  
Carrier Capture ◽  
Self Assembled ◽  
Charge Carrier Capture

scholarly journals The charge carrier capture–emission process – the main source of the low-frequency noise in homogeneous semiconductors

2017 ◽  
Vol 56 (4) ◽  
pp. 200-206 ◽  
Author(s):  
Vilius Palenskis
Keyword(s):  
Charge Carrier ◽  
Noise Level ◽  
Relaxation Times ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Carrier Capture ◽  
Emission Process ◽  
Minimum Number ◽  
Charge Carrier Capture

The possibility of determination of the number of localized capture centers of defects (relaxators) that cause low-frequency noise in a particular frequency range has been investigated. Here it is shown that a minimum number of relaxators is needed to generate 1/f type low-frequency noise only when relaxation times are arbitrarily distributed one-by-one in every two-octave range. The expression for estimation of the low-frequency noise level of the sample under test is presented. The presented expression for 1/f noise explains not only the noise level dependence both on the frequency and number of defects in the sample but also the observed noise intensity dependence on the mobility of free charge carriers. It is shown that the main source that causes low-frequency noise in homogeneous semiconductors is the charge carrier capture–emission process.

Clusters of Dipole Charge-Carrier Capture Centers in Organic Crystals

1991 ◽  
Vol 201 (1) ◽  
pp. 167-175 ◽  
Author(s):  
A. K. Kadashchuk ◽  
N. I. Ostapenko ◽  
Yu. A. Skryshevskii ◽  
V. I. Sugakov ◽  
T. O. Susokolova
Keyword(s):  
Charge Carrier ◽  
Organic Crystals ◽  
Carrier Capture ◽  
Charge Carrier Capture

scholarly journals Влияние квантового магнитного поля на разогрев носителей заряда в чистом Ge

2019 ◽  
Vol 53 (1) ◽  
pp. 13
Author(s):  
В.Ф. Банная ◽  
Е.В. Никитина
Keyword(s):  
Magnetic Field ◽  
Experimental Study ◽  
Charge Carrier ◽  
Electric Field ◽  
Qualitative Agreement ◽  
Carrier Heating ◽  
Electric And Magnetic Fields ◽  
Quantizing Magnetic Field ◽  
P Type ◽  
Charge Carrier Capture

AbstractThe results of an experimental study of charge-carrier heating by an electric field E in pure n - and p -type germanium samples in a quantizing magnetic field H , at E ⊥ H and under carrier photoexcitation conditions, are considered in detail. The results obtained are in qualitative agreement with the predictions of the theory of charge-carrier capture in crossed electric and magnetic fields.

1D Charge Carrier Dynamics in GaAs Quantum Wires Carrier Capture, Relaxation, and Recombination

1992 ◽  
Vol 173 (1) ◽  
pp. 307-321 ◽  
Author(s):  
J. Christen ◽  
E. Kapon ◽  
M. Grundmann ◽  
D. M. Hwang ◽  
M. Joschko ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Wires ◽  
Carrier Dynamics ◽  
Carrier Capture ◽  
Charge Carrier Dynamics

Charge Carrier Scattering Mechanisms in Thermoelectric PbTe:Sb

2014 ◽  
Vol 59 (7) ◽  
pp. 706-711 ◽  
Author(s):  
D.M. Freik ◽  
◽  
S.I. Mudryi ◽  
I.V. Gorichok ◽  
R.O Dzumedze ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Scattering Mechanisms ◽  
Carrier Scattering ◽  
Charge Carrier Scattering
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