Erratum: A Theoretical Study of the Effect of Elastic Strain on the Electrical Resistance of Thin Metal Films

1968 ◽  
Vol 39 (8) ◽  
pp. 4048-4048
Author(s):  
Z. H. Meiksin ◽  
R. A. Hudzinski
Keyword(s):  
Electrical Resistance ◽  
Elastic Strain ◽  
Theoretical Study ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films

Monte-Carlo Calculations of the Electrical Resistance of Ultra-Thin Metal Films

1985 ◽  
Vol 40 (2) ◽  
pp. 161-163 ◽  
Author(s):  
H.-U. Finzel ◽  
P. Wißmann
Keyword(s):  
Monte Carlo ◽  
Network Analysis ◽  
Electrical Resistance ◽  
Deposition Process ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Monte Carlo Calculations ◽  
Random Generator ◽  
Shape And Size

The thickness dependence of the electrical resistance of ultra-thin metal films is calculated under the assumption that atoms or clusters of equal shape and size impinge and stick upon the substrate with statistical equipartition. The deposition process is simulated with the aid of a random generator. By network analysis an initially strong and then weaker decrease of the resistance with increasing film thickness is found.

Notizen: The Temperature Coefficient of the Resistance of Ultra-Thin Metal Films from Computer Simulations

1985 ◽  
Vol 40 (10) ◽  
pp. 1066-1068 ◽  
Author(s):  
H.-U. Finzel ◽  
P. Wißmann
Keyword(s):  
Monte Carlo ◽  
Temperature Coefficient ◽  
Computer Simulations ◽  
Electrical Resistance ◽  
Metal Films ◽  
Absolute Temperature ◽  
Thin Metal ◽  
Strong Increase ◽  
Thin Metal Films ◽  
Monte Carlo Calculations

The thickness dependence of the absolute temperature coefficient of the resistance of ultra-thin metal films is calculated with the help of Monte-Carlo calculations already successfully applied to the simulation of the electrical resistance. An initially strong increase and then a weaker decrease of the ATCR with increasing thickness is found.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

On the electrocatalytic symbiotic synergism between Pt, Ni and Al in plasma vapour deposited PtxNiyAlz thin metal films for water electrolysis

2021 ◽  
Vol 494 ◽  
pp. 229344
Author(s):  
Roelof J. Kriek ◽  
Liesel A. van Heerden ◽  
Anzel Falch ◽  
Malcolm I. Gillespie ◽  
Alaa Y. Faid ◽  
...  
Keyword(s):  
Water Electrolysis ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films
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