Enhanced optical frequency detection with negative differential resistance in metal‐barrier‐metal point‐contact diodes

1974 ◽  
Vol 25 (9) ◽  
pp. 493-495 ◽  
Author(s):  
S. Y. Wang ◽  
S. M. Faris ◽  
D. P. Siu ◽  
R. K. Jain ◽  
T. K. Gustafson
Keyword(s):  
Negative Differential Resistance ◽  
Point Contact ◽  
Differential Resistance ◽  
Optical Frequency ◽  
Frequency Detection ◽  
Barrier Metal ◽  
Metal Barrier

Optical-frequency gas flow meter on the basis of transistor structures with negative differential resistance

2020 ◽  
Author(s):  
Alexander V. Osadchuk ◽  
Volodymyr S. Osadchuk ◽  
Iaroslav O. Osadchuk ◽  
Nataliia V. Titova ◽  
Olga Y. Pinaeva ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Gas Flow ◽  
Differential Resistance ◽  
Optical Frequency ◽  
Flow Meter

scholarly journals Solid state radio-measuring optical-frequency transducer of gas flow rate

2021 ◽  
Vol 22 (2) ◽  
pp. 224-232
Author(s):  
A.V. Osadchuk ◽  
V.S. Osadchuk ◽  
I.A. Osadchuk ◽  
D.R. Ilchuk ◽  
G.A. Pastushenko
Keyword(s):  
Solid State ◽  
Negative Differential Resistance ◽  
Gas Flow ◽  
Supply Voltage ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Optical Frequency ◽  
Transistor Structure ◽  
Radio Measuring ◽  
Gas Consumption

The paper presents a study of a solid state radio-measuring optical-frequency transducer of gas consumption based on a transistor structure with a negative differential resistance. A mathematical model of a solid state radio-measuring optical-frequency flowmeter was developed, which made it possible to obtain the conversion function and the sensitivity equation. The solid state radio-measuring optical-frequency gas flowmeter is based on a transistor structure with a negative differential resistance, consisting of a HEMT field-effect transistor and a bipolar transistor with a passive inductive element. When replacing the passive inductance with an active inductive element, the transducer can be completely integrated. The negative differential resistance formed by the parallel connection of the impedance with the capacitive component on the collector-drain electrodes of the transistor structure and inductance leads to the occurrence of electrical oscillations in the oscillator circuit. Theoretical and experimental studies have shown that with an increase in gas consumption from 0 l/h to 4 l/h, the generation frequency decreases from 812.65 MHz to 811.62 MHz at a supply voltage of 3.3 V, and at a supply voltage of 3.8 V from 813.00 MHz to 811.80 MHz. It is shown that by choosing a constant voltage power supply mode, it is possible to obtain an almost linear dependence of the generation frequency on the gas flow rate and choose channels for transmitting measurement information. The obtained theoretical and experimental studies are in good agreement, the relative error does not exceed 2.5 %.

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

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