Velocity scatter in magnetic bubble motion

Richard M. Josephs

doi:10.1063/1.1655457

Velocity scatter in magnetic bubble motion

Applied Physics Letters ◽

10.1063/1.1655457 ◽

1974 ◽

Vol 25 (4) ◽

pp. 244-246 ◽

Cited By ~ 12

Author(s):

Richard M. Josephs

Keyword(s):

Bubble Motion ◽

Magnetic Bubble ◽

Velocity Scatter

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Large-scale Motion of Solar Filaments

International Astronomical Union Colloquium ◽

10.1017/s0252921100064502 ◽

2000 ◽

Vol 179 ◽

pp. 205-208

Author(s):

Pavel Ambrož ◽

Alfred Schroll

Keyword(s):

Magnetic Flux ◽

Proper Motion ◽

Time Scale ◽

Large Scale ◽

Accuracy Of Measurements ◽

Solar Filaments ◽

General Movement ◽

Scale Motion ◽

Velocity Scatter

AbstractPrecise measurements of heliographic position of solar filaments were used for determination of the proper motion of solar filaments on the time-scale of days. The filaments have a tendency to make a shaking or waving of the external structure and to make a general movement of whole filament body, coinciding with the transport of the magnetic flux in the photosphere. The velocity scatter of individual measured points is about one order higher than the accuracy of measurements.

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Micropatterning of Permalloy Films by Electron Lithography

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100092207 ◽

1976 ◽

Vol 34 ◽

pp. 448-449

Author(s):

J. K. Maurin

Keyword(s):

Electron Beam ◽

Subsequent Development ◽

Electron Optical System ◽

Microelectronic Device ◽

Magnetic Bubble ◽

Control Beam ◽

Photosensitive Material ◽

Direct Exposure ◽

Electron Lithography ◽

Scanning Electron

Conductor, resistor, and dielectric patterns of microelectronic device are usually defined by exposure of a photosensitive material through a mask onto the device with subsequent development of the photoresist and chemical removal of the undesired materials. Standard optical techniques are limited and electron lithography provides several important advantages, including the ability to expose features as small as 1,000 Å, and direct exposure on the wafer with no intermediate mask. This presentation is intended to report how electron lithography was used to define the permalloy patterns which are used to manipulate domains in magnetic bubble memory devices.The electron optical system used in our experiment as shown in Fig. 1 consisted of a high resolution scanning electron microscope, a computer, and a high precision motorized specimen stage. The computer is appropriately interfaced to address the electron beam, control beam exposure, and move the specimen stage.

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