Experimental determination of highly concentration‐sensitive effects of intervalley electron‐electron scattering on electric‐field‐dependent repopulation inn‐Si at 77 K

1974 ◽  
Vol 24 (3) ◽  
pp. 139-141 ◽  
Author(s):  
James G. Nash ◽  
James W. Holm‐Kennedy
Keyword(s):  
Electric Field ◽  
Experimental Determination ◽  
Electron Scattering ◽  
Field Dependent

Theoretical Analysis and Experimental Determination of the Relationships Between the Parameters of the Electric Field Pulse Required to Electroporate the Cells

2013 ◽  
Vol 41 (10) ◽  
pp. 2913-2919 ◽  
Author(s):  
Gintautas Saulis ◽  
Rita Saule ◽  
Aiste Bitinaite ◽  
Nerija Zurauskiene ◽  
Voitech Stankevic ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Electric Field ◽  
Experimental Determination ◽  
Electric Field Pulse ◽  
Field Pulse

Experimental determination of the electric field and charge distribution in magnetically insulated ion diodes

1987 ◽  
Vol 36 (6) ◽  
pp. 2818-2832 ◽  
Author(s):  
Y. Maron ◽  
M. D. Coleman ◽  
D. A. Hammer ◽  
H. S. Peng
Keyword(s):  
Electric Field ◽  
Experimental Determination ◽  
Charge Distribution

Experimental determination of the helicoidal electric field inside a twisted mesophase, in the selective reflection band

1990 ◽  
Vol 7 (2) ◽  
pp. 283-286 ◽  
Author(s):  
Gilles Joly ◽  
Hassane Azzioui ◽  
Noël Isaert ◽  
Abdelkader Barroug
Keyword(s):  
Electric Field ◽  
Experimental Determination ◽  
Reflection Band ◽  
Selective Reflection

To the Experimental Determination of the Spontaneous Polarization for the Silicon Carbide Polytypes

2013 ◽  
Vol 740-742 ◽  
pp. 459-462
Author(s):  
Sergey Yu. Davydov ◽  
Alexander A. Lebedev ◽  
O.V. Posrednik
Keyword(s):  
Silicon Carbide ◽  
Electric Field ◽  
Quantum Wells ◽  
Experimental Determination ◽  
External Electric Field ◽  
Spontaneous Polarization ◽  
Left And Right ◽  
The Difference ◽  
Local Levels

A NH/3C-SiC heterojunction and a heterostructur of the NH/3C/NH type (N = 2, 4, 6, 8) are consid-ered. Two possibilities are analyzed for heterojunctions, in which a Si or a C is the contact plane of the NH polytype. In this case, the energies of the quasi-local levels in the quantum wells at the interface will be different. With the difference of these energies measured, it is possible to determine the spon-taneous polarization inherent in the NH polytype. In the presence of a spontaneous polarization field, the quasi-local levels in the left- and right-hand quantum wells of the heterostructure have dif-ferent energies. It is shown that, if the heterostructur is placed in an external electric field, it is possible to determine the magnitude of the spontaneous polarization by calculating the different between the energies of these levels. Experimental ways to find by using the suggested theoretical scenario are discussed.

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