EFFECT OF ION‐IMPLANTATION DAMAGE ON THE OPTICAL REFLECTION SPECTRUM OF GALLIUM ARSENIDE

1970 ◽  
Vol 17 (7) ◽  
pp. 274-276 ◽  
Author(s):  
G. A. Shifrin ◽  
R. G. Hunsperger
Keyword(s):  
Gallium Arsenide ◽  
Ion Implantation ◽  
Reflection Spectrum ◽  
Optical Reflection ◽  
Implantation Damage ◽  
Optical Reflection Spectrum

Impurity gettering in semi‐insulating gallium arsenide using ion‐implantation damage

1976 ◽  
Vol 29 (11) ◽  
pp. 698-699 ◽  
Author(s):  
C. O. Bozler ◽  
J. P. Donnelly ◽  
W. T. Lindley ◽  
R. A. Reynolds
Keyword(s):  
Gallium Arsenide ◽  
Ion Implantation ◽  
Implantation Damage

Metal corrosion measurement method based on optical reflection spectrum analysis

2018 ◽  
Author(s):  
Hee Taek Cho ◽  
Ok Rak Lim ◽  
Gyeong-Seo Seo ◽  
Kyu Hyuk Lee ◽  
Tae Jun Park ◽  
...  
Keyword(s):  
Spectrum Analysis ◽  
Reflection Spectrum ◽  
Measurement Method ◽  
Metal Corrosion ◽  
Optical Reflection ◽  
Optical Reflection Spectrum

Transient Annealing of Ion Implanted Gallium Arsenide

1982 ◽  
Vol 13 ◽  
Author(s):  
J.S. Williams
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Solid Phase ◽  
Dopant Activation ◽  
Implantation Damage ◽  
Dopant Redistribution ◽  
Ion Implanted

ABSTRACTThis paper provides a brief overview of the application of transient annealing to the removal of ion implantation damage and dopant activation in GaAs. It is shown that both the liquid phase and solid phase annealing processes are more complex in GaAs than those observed in Si. Particular attention is given to observations of damage removal, surface dissociation, dopant redistribution, solubility and the electrical properties of GaAs. The various annealing mechanisms are discussed and areas in need of further investigation are identified.

scholarly journals Study of Ar+ and He+ implanted SOS-structures

2021 ◽  
Vol 906 (1) ◽  
pp. 012022
Author(s):  
Amiran Bibilashvili ◽  
Lado Jibuti ◽  
Zurab Jibuti ◽  
Givi Skhiladze
Keyword(s):  
Work Function ◽  
Reflection Spectrum ◽  
High Efficiency ◽  
Negative Charge ◽  
Silicon On Insulator ◽  
Optical Characteristics ◽  
Reference List ◽  
Optical Reflection ◽  
Optical Reflection Spectrum

Abstract In the work Silicon – on - insulator nanostructures after implantation by various doses of ions 4He+ and 40Ar+ are investigated. Researches were carried out by measurement of optical reflection spectrum and magnitude of work function of an electron. It is shown that ions 40Ar+ in Silicon – on - insulator nanostructures, providing high efficiency of gettering influence, incorporate the neutral divacancy responsible for an observable minimum in ranges of reflection 0.73-0.75eV. As a result of implanted by ions 4He+ the gettering doesn’t occur and the entered defects are divacancies with one negative charge, responsible for an observable maximum in reflection ranges 0.73-0.75eV. The received results indicate possibility of purposeful updating of Silicon – on - insulator nanostructures for improvement of their optical characteristics. Start your abstract here… The abstract should include the purpose of research, principal results and major conclusions. References should be avoided, if it is essential, only cite the author(s) and year(s) without giving reference list. Prepare your abstract in this file and then copy it into the registration web field.

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

Characterization of Ion Implantation Damage in Capless Annealed GaAs

1983 ◽  
Vol 27 ◽  
Author(s):  
H. Kanber ◽  
M. Feng ◽  
J. M. Whelan
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Buffer Layers ◽  
Electrical Activation ◽  
Controlled Atmosphere ◽  
Damage Characteristics ◽  
Implantation Damage ◽  
Implantation Process

ABSTRACTArsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.

Sign in / Sign up

Export Citation Format

Share Document