ELECTRON EMISSION FROM A ``COLD‐CATHODE'' GaAs p‐n JUNCTION

1969 ◽  
Vol 14 (7) ◽  
pp. 214-216 ◽  
Author(s):  
B. F. Williams ◽  
R. E. Simon
Keyword(s):  
Electron Emission ◽  
Cold Cathode

Electron emission of carbon nitride films and mechanism for the nitrogen-lowered threshold in cold cathode

2003 ◽  
Vol 94 (4) ◽  
pp. 2741-2745 ◽  
Author(s):  
W. T. Zheng ◽  
J. J. Li ◽  
X. Wang ◽  
X. T. Li ◽  
Z. S. Jin ◽  
...  
Keyword(s):  
Electron Emission ◽  
Carbon Nitride ◽  
Cold Cathode

Metal Coated, fs-Laser Fabricated Silicon Spikes as Electron Emitters for Cold Cathode Applications

2009 ◽  
Vol 1195 ◽  
Author(s):  
Emmanuel Spanakis ◽  
Marios Barberoglou ◽  
Panagiotis Tzanetakis ◽  
Costas Fotakis
Keyword(s):  
Electron Emission ◽  
Marked Change ◽  
Emission Characteristics ◽  
Cold Cathode ◽  
Metal Coatings ◽  
Operation Conditions ◽  
Device Applications ◽  
Fs Laser ◽  
Silicon Microstructures ◽  
Electron Emitters

AbstractWe have studied the effect of thin metal coatings on the electron emission characteristics of self-assembled silicon microstructures with nearly identical sharp features. We have employed a common template of spikes produced by fs-laser self-driven structuring of Si on which several different metals have been deposited. We find that, in the pristine state and in vacuum conditions achievable in device applications, all metal coatings do not result in marked change of either the minimum electric field necessary for emission or the maximum obtainable current density. In contrast, the durability of the emitters depends strongly on the metal used and is always enhanced with respect to bare Si. Furthermore, no signs of degradation were found within the 3-day time scale of our experiments with gold and chromium. On the contrary, these two metal coatings resulted in emission characteristics improving with time in typical operation conditions.

Quasiballistic Electron Emission from Planarized Nanocrystalline-Si Cold Cathode

2004 ◽  
Vol 832 ◽  
Author(s):  
Yoshishige Tsuchiya ◽  
Takuya Nakatsukasa ◽  
Hiroshi Mizuta ◽  
Shunri Oda ◽  
Akira Kojima ◽  
...  
Keyword(s):  
Electron Transport ◽  
Porous Silicon ◽  
Energy Distribution ◽  
Electron Emission ◽  
High Efficiency ◽  
Cathode Surface ◽  
Cold Cathode ◽  
Silicon Diode ◽  
Nanocrystalline Si

ABSTRACTMechanism of electron transport through planerized nanocrystalline-Si (nc-Si) cold cathode surface emitting devices was investigated. The energy distribution of electrons emitted from nc-Si emitter was obviously not Maxwellian, which was usually obtained at conventional cold cathode devices, but was similar to that from the nanocrystalline porous silicon diode emitter. These results strongly suggest that electrons are emitted quasiballistically from our devices and indicate that the planarized nc-Si layer play an important role in this high efficiency cold cathode emitter.

EFFICIENT ELECTRON EMISSION FROM GaAs–Al1−xGaxAs OPTOELECTRONIC COLD‐CATHODE STRUCTURES

1971 ◽  
Vol 18 (10) ◽  
pp. 413-414 ◽  
Author(s):  
H. Schade ◽  
H. Nelson ◽  
H. Kressel
Keyword(s):  
Electron Emission ◽  
Cold Cathode

Characteristics of a cold cathode electron source combined with secondary electron emission in a FED

2005 ◽  
Vol 251 (1-4) ◽  
pp. 170-176 ◽  
Author(s):  
Wei Lei ◽  
Xiaobing Zhang ◽  
Xuedong Zhou ◽  
Zuoya Zhu ◽  
Chaogang Lou ◽  
...  
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Electron Source ◽  
Cold Cathode

COLD‐CATHODE ELECTRON EMISSION FROM SILICON

1971 ◽  
Vol 18 (7) ◽  
pp. 272-273 ◽  
Author(s):  
Elliott S. Kohn
Keyword(s):  
Electron Emission ◽  
Cold Cathode
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