SOUND WAVE AMPLIFICATION IN INDIUM ANTIMONIDE

1969 ◽  
Vol 14 (3) ◽  
pp. 97-99 ◽  
Author(s):  
R. K. Route ◽  
G. S. Kino
1974 ◽  
Vol 21 (2) ◽  
pp. K99-K103 ◽  
Author(s):  
Yu. V. Ilisavskii ◽  
E. Z. Yakhkind

1999 ◽  
Vol 9 (2) ◽  
pp. 3661-3663
Author(s):  
G.I. Urushadze ◽  
Z.Z. Toklikashvili

1981 ◽  
Vol 43 (3-4) ◽  
pp. 397-408 ◽  
Author(s):  
P. Otschik ◽  
H. Eschrig ◽  
F. Lange

2012 ◽  
Author(s):  
Bruno Moreira ◽  
Mauricio Kischinhevsky ◽  
Marcelo Zamith ◽  
Esteban Clua ◽  
Diego Brandao

2018 ◽  
Vol 1 (1) ◽  
pp. 78-94
Author(s):  
I. A. Obukhov ◽  
◽  
G. G. Gorokh ◽  
A. A. Lozovenko ◽  
E. A. Smirnova ◽  
...  
Keyword(s):  

2013 ◽  
Vol 38 (4) ◽  
pp. 565-570 ◽  
Author(s):  
Bartłomiej Kruk

Abstract Research in termoacoustics began with the observation of the heat transfer between gas and solids. Using this interaction the intense sound wave could be applied to create engines and heat pumps. The most important part of thermoacoustic devices is a regenerator, where press of conversion of sound energy into thermal or vice versa takes place. In a heat pump the acoustic wave produces the temperature difference at the two ends of the regenerator. The aim of the paper is to find the influence of the material used for the construction of a regenerator on the properties of a thermoacoustic heat pump. Modern technologies allow us to create new materials with physical properties necessary to increase the temperature gradient on the heat exchangers. The aim of this paper is to create a regenerator which strongly improves the efficiency of the heat pump.


2015 ◽  
Vol 9 (1) ◽  
pp. 170-174 ◽  
Author(s):  
Xiaoling Zhang ◽  
Qingduan Meng ◽  
Liwen Zhang

The square checkerboard buckling deformation appearing in indium antimonide infrared focal-plane arrays (InSb IRFPAs) subjected to the thermal shock tests, results in the fracturing of the InSb chip, which restricts its final yield. In light of the proposed three-dimensional modeling, we proposed the method of thinning a silicon readout integrated circuit (ROIC) to level the uneven top surface of InSb IRFPAs. Simulation results show that when the silicon ROIC is thinned from 300 μm to 20 μm, the maximal displacement in the InSb IRFPAs linearly decreases from 7.115 μm to 0.670 μm in the upward direction, and also decreases linearly from 14.013 μm to 1.612 μm in the downward direction. Once the thickness of the silicon ROIC is less than 50 μm, the square checkerboard buckling deformation distribution presenting in the thicker InSb IRFPAs disappears, and the top surface of the InSb IRFPAs becomes flat. All these findings imply that the thickness of the silicon ROIC determines the degree of deformation in the InSb IRFPAs under a thermal shock test, that the method of thinning a silicon ROIC is suitable for decreasing the fracture probability of the InSb chip, and that this approach improves the reliability of InSb IRFPAs.


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