ELECTRON BEAM CHANNELING IN SINGLE‐CRYSTAL SILICON BY SCANNING ELECTRON MICROSCOPY

1969 ◽  
Vol 14 (10) ◽  
pp. 299-300 ◽  
Author(s):  
E. D. Wolf ◽  
T. E. Everhart
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Scanning Electron

Improved Photoluminescence from Ar+ and N+ Ions Co-Implanted Porous Silicon

2010 ◽  
Vol 150-151 ◽  
pp. 992-995
Author(s):  
Xiao Yi Lv ◽  
Jia Qing Mo ◽  
Fu Ru Zhong ◽  
Zhen Hong Jia ◽  
Mei Xiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Porous Silicon ◽  
Ion Implantation ◽  
Porous Structure ◽  
Single Crystal Silicon ◽  
Photoluminescence Intensity ◽  
Crystal Silicon ◽  
Different Doses ◽  
Scanning Electron

We have measured photoluminescence of porous silicon which is electrochemically prepared on single crystal silicon wafer with co-implantation of Ar+ and N+ ions. The results show that the photoluminescence intensity of porous structure of co-implanted silicon was enhanced that we attribute these to the enhanced formation of porous silicon microstructure induced by ion implantation and from the analysis by scanning electron microscopy, it is demonstrated that the different density of the pores with different doses ion implantation

High Resolution Scanning Electron Microscopy

1991 ◽  
Vol 49 ◽  
pp. 478-479
Author(s):  
David Joy ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Impact Point ◽  
Interaction Volume ◽  
Scanning Electron

The scanning electron microscope (SEM) builds up an image by sampling contiguous sub-volumes near the surface of the specimen. A fine electron beam selectively excites each sub-volume and then the intensity of some resulting signal is measured. The spatial resolution of images made using such a process is limited by at least three factors. Two of these determine the size of the interaction volume: the size of the electron probe and the extent to which detectable signal is excited from locations remote from the beam impact point. A third limitation emerges from the fact that the probing beam is composed of a finite number of discrete particles and therefore that the accuracy with which any detectable signal can be measured is limited by Poisson statistics applied to this number (or to the number of events actually detected if this is smaller).

Investigation of Die Tilting of Packages with Single and Multi-chips

2018 ◽  
Author(s):  
Lo Chea Wee ◽  
Tan Sze Yee ◽  
Gan Sue Yin ◽  
Goh Cin Sheng
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Optical Microscopy ◽  
Device Performance ◽  
Electronic Components ◽  
Area Of Interest ◽  
On Chip ◽  
Scanning Electron

Abstract Advanced package technology often includes multi-chips in one package to accommodate the technology demand on size & functionality. Die tilting leads to poor device performance for all kinds of multi-chip packages such as chip by chip (CbC), chip on chip (CoC), and the package with both CbC and CoC. Traditional die tilting measured by optical microscopy and scanning electron microscopy has capability issue due to wave or electron beam blocking at area of interest by electronic components nearby. In this paper, the feasibility of using profilemeter to investigate die tilting in single and multi-chips is demonstrated. Our results validate that the profilemeter is the most profound metrology for die tilting analysis especially on multi-chip packages, and can achieve an accuracy of <2μm comparable to SEM.

Microstructure Analysis of Electron-Beam Brazed γ-Titanium Aluminide

2011 ◽  
Vol 690 ◽  
pp. 153-156
Author(s):  
Uwe Reisgen ◽  
Simon Olschok ◽  
Alexander Backhaus
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Titanium Aluminide ◽  
Titanium Aluminides ◽  
Microstructure Analysis ◽  
Energy Dispersive ◽  
X Ray ◽  
Scanning Electron

This paper gives an account of research which has been carried out on electron-beam brazed specimens made of high-Niobium γ-titanium aluminides. The microstructure in the brazing area of two different brazes (TiCuNi and Ni 102) is explained and analysed via scanning electron microscopy and energy dispersive X-ray spectroscopy.

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