Optical amplification and electroluminescence at 1.54 μm in Er-doped zinc silicate germanate on silicon

2004 ◽  
Vol 84 (9) ◽  
pp. 1462-1464 ◽  
Author(s):  
C. C. Baker ◽  
J. Heikenfeld ◽  
Z. Yu ◽  
A. J. Steckl
2010 ◽  
Vol 97 (20) ◽  
pp. 201107 ◽  
Author(s):  
Oleksandr Savchyn ◽  
Kevin R. Coffey ◽  
Pieter G. Kik

2009 ◽  
Author(s):  
V. Donzella ◽  
V. Toccafondo ◽  
S. Faralli ◽  
F. Di Pasquale ◽  
A. Pitanti ◽  
...  

1990 ◽  
Vol 2 (1) ◽  
pp. 43-45 ◽  
Author(s):  
M. Shimizu ◽  
M. Yamada ◽  
M. Horiguchi ◽  
E. Sugita

2004 ◽  
Vol 817 ◽  
Author(s):  
Seunghoon Lee ◽  
Ung Kim ◽  
Juntae Kim ◽  
Sang Man Koo

AbstractErbium ion (Er3+) doped materials are of great interest for their optical amplification, lasing and frequency up-conversion properties. When preparing such materials, a major problem that often arises is the formation of Er-rich oxide clusters inducing optical quenching. The materials prepared at low Er3+-ion concentrations to overcome the problem have severely reduced the optical yield. Such clustering might be avoided by preparing suitable precursors. If Er is encapsulated with proper materials, clustering can be avoided and higher doping levels can be achieved. In this study, erbium phenoxide complex was obtained by metathesis reaction of erbium chloride (ErCl3) with potassium phenoxide (KOPh). And heterometallic complexes were also synthesized by encapsulation of the Er with Al or Ti derivatives. The complexes were characterized by elemental analysis, infrared and nuclear magnetic resonance spectroscopic analysis. Their crystal structures were determined by X-ray single crystal diffraction analysis. In addition, the Er-doped organic-inorganic matrices using the erbium complexes were investigated about their optical properties.


2003 ◽  
Vol 770 ◽  
Author(s):  
H. Przybylinska ◽  
N. Q. Vinh ◽  
B.A. Andreev ◽  
Z. F. Krasil'nik ◽  
T. Gregorkiewicz

AbstractA successful observation and analysis of the Zeeman effect on the near 1.54 μm photoluminescence spectrum in Er-doped crystalline MBE-grown silicon are reported. A clearly resolved splitting of 5 major spectral components was observed in magnetic fields up to 5.5 T. Based on the analysis of the data the symmetry of the dominant optically active center was conclusively established as orthorhombic I (C2v), with g‼≈18.4 and g⊥≈0 in the ground state. The fact that g⊥≈0 explains why EPR detection of Er-related optically active centers in silicon may be difficult. Preferential generation of a single type of an optically active Er-related center in MBE growth confirmed in this study is essential for photonic applications of Si:Er.


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