Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress

2004 ◽  
Vol 95 (7) ◽  
pp. 3453-3465 ◽  
Author(s):  
W. G. Breiland ◽  
S. R. Lee ◽  
D. D. Koleske
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Film Stress ◽  
Wafer Curvature ◽  
Thin Film Stress ◽  
Curvature Measurements

Effect of Film Thickness and Annealing Time on Residual Stress of High-k Al2O3 Film on Si-(100) Substrate

2013 ◽  
Vol 644 ◽  
pp. 161-164
Author(s):  
Wu Tang ◽  
Ji Jun Yang ◽  
Chi Ming Li
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Film Thickness ◽  
Annealing Time ◽  
Gate Dielectric ◽  
Electron Beam Evaporation ◽  
Film Stress ◽  
X Ray Diffraction ◽  
Thin Film Stress ◽  
High K

In this paper, Al2O3 thin film samples were deposited on Si-(100) substrate by electron beam evaporation with different thickness at substrate temperature 400°C and after that, annealed in the air at 500°C with different time. The structure, thickness and residual stress of these films were measured by X-ray diffraction (XRD), stylus profiler and electronic thin film stress distribution tester, respectively. The effects of several parameters on the properties of Al2O3 films were studied. In addition, the relations between thickness and residual stress of Al2O3 thin films as the high-k gate dielectric was analyzed. The results shown that the residual stress becomes smaller after annealing, the residual stress was depressed down to maximum value 300MPa from 580MPa for annealing time 30min, and depressed down to minimum value 220MPa from 580MPa for annealing time 60min. But eventually, it has a critical film thickness point on the scale.

scholarly journals Real Time Measurement of Epilayer Strain Using a Simplified Wafer Curvature Technique

1995 ◽  
Vol 406 ◽  
Author(s):  
J. A. Floro ◽  
E. Chason ◽  
S. R. Lee
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Time Measurement ◽  
Film Stress ◽  
Wafer Curvature ◽  
Thin Film Stress ◽  
Real Time Measurement ◽  
Cvd Growth

AbstractWe describe a technique for measuring thin film stress using wafer curvature that is robust, compact, easy to setup, and sufficiently sensitive to serve as a routine diagnostic of semiconductor epilayer strain in real time during MBE or CVD growth. We demonstrate, using growth of SiGe alloys on Si, that the critical thickness for misfit dislocation can clearly be resolved, and that the subsequent strain relaxation kinetics during growth or post-growth annealing are readily obtained.

scholarly journals Real Time Measurement of Epilayer Strain Using a Simplified Wafer Curvature Technique

1995 ◽  
Vol 405 ◽  
Author(s):  
J. A. Floro ◽  
E. Chason ◽  
S. R. Lee
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Time Measurement ◽  
Film Stress ◽  
Wafer Curvature ◽  
Thin Film Stress ◽  
Real Time Measurement ◽  
Cvd Growth

AbstractWe describe a technique for measuring thin film stress using wafer curvature that is robust, compact, easy to setup, and sufficiently sensitive to serve as a routine diagnostic of semiconductor epilayer strain in real time during MBE or CVD growth. We demonstrate, using growth of SiGe alloys on Si, that the critical thickness for misfit dislocation can clearly be resolved, and that the subsequent strain relaxation kinetics during growth or post-growth annealing are readily obtained.

On the Stoney Formula for a Thin Film/Substrate System With Nonuniform Substrate Thickness

2007 ◽  
Vol 74 (6) ◽  
pp. 1276-1281 ◽  
Author(s):  
X. Feng ◽  
Y. Huang ◽  
A. J. Rosakis
Keyword(s):  
Thin Film ◽  
Misfit Strain ◽  
Film Stress ◽  
Substrate Thickness ◽  
Full Field ◽  
Temperature Changes ◽  
Thin Film Stress ◽  
Curvature Measurements ◽  
Film Substrate ◽  
Stoney Formula

Current methodologies used for the inference of thin film stress through system curvature measurements are strictly restricted to stress and curvature states which are assumed to remain uniform over the entire film/substrate system. Recently Huang, Rosakis, and co-workers [Acta Mech. Sinica, 21, pp. 362–370 (2005); J. Mech. Phys. Solids, 53, 2483–2500 (2005); Thin Solid Films, 515, pp. 2220–2229 (2006); J. Appl. Mech., in press; J. Mech. Mater. Struct., in press] established methods for the film/substrate system subject to nonuniform misfit strain and temperature changes. The film stresses were found to depend nonlocally on system curvatures (i.e., depend on the full-field curvatures). These methods, however, all assume uniform substrate thickness, which is sometimes violated in the thin film/substrate system. Using the perturbation analysis, we extend the methods to nonuniform substrate thickness for the thin film/substrate system subject to nonuniform misfit strain.

Stresses in a Multilayer Thin Film/Substrate System Subjected to Nonuniform Temperature

2008 ◽  
Vol 75 (2) ◽  
Author(s):  
X. Feng ◽  
Y. Huang ◽  
A. J. Rosakis
Keyword(s):  
Thin Film ◽  
Field Measurements ◽  
Film Stress ◽  
Effect Of Temperature ◽  
Multilayer Thin Film ◽  
Nonuniform Temperature ◽  
Curvature Invariant ◽  
Full Field ◽  
Curvature Measurements ◽  
Film Substrate

Current methodologies used for the inference of thin film stress through curvature measurements are strictly restricted to uniform film stress and system curvature states over the entire system of a single thin film on a substrate. By considering a circular multilayer thin film/substrate system subjected to nonuniform temperature distributions, we derive relations between the stresses in each film and temperature, and between the system curvatures and temperature. These relations featured a “local” part that involves a direct dependence of the stress or curvature components on the temperature at the same point, and a “nonlocal” part, which reflects the effect of temperature of other points on the location of scrutiny. We also derive relations between the film stresses in each film and the system curvatures, which allow for the experimental inference of such stresses from full-field curvature measurements in the presence of arbitrary nonuniformities. These relations also feature a “nonlocal” dependence on curvatures making full-field measurements of curvature a necessity for the correct inference of stress. The interfacial shear tractions between the films and between the film and substrate are proportional to the gradient of the first curvature invariant, and can also be inferred experimentally.

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