Terahertz electro-optic wavelength conversion in GaAs quantum wells: Improved efficiency and room-temperature operation

2004 ◽  
Vol 84 (6) ◽  
pp. 840-842 ◽  
Author(s):  
S. G. Carter ◽  
V. Ciulin ◽  
M. S. Sherwin ◽  
M. Hanson ◽  
A. Huntington ◽  
...  
2002 ◽  
Vol 12 (03) ◽  
pp. 803-819 ◽  
Author(s):  
H. C. Liu ◽  
R. Dudek ◽  
A. Shen ◽  
E. Dupont ◽  
C.-Y. Song ◽  
...  

For the majority of applications involving detection of weak signals or thermal imaging, the quantum well infrared photodetector (QWIP) is designed to have the highest possible detectivity and operating temperature. The device parameters, such as the doping density, are chosen accordingly. In a different direction, the intrinsic short carrier lifetime (~ 5 ps) makes QWIPs well suited for high speed and high frequency applications. In such cases, since lasers are normally used, a high dark current can be tolerated. The most important parameter is then the absorption efficiency. For system simplicity and potential wide use, room temperature or near room temperature (reachable by thermo-electric cooling) operations are desirable. This paper discusses the QWIP design for high absorption and elevated temperature operation, and present a systematic experimental study on a set of GaAs/AlGaAs QWIPs with different doping densities. High absorption (~ 100%) and up to room temperature operation are achieved in devices having high doping densities and 100 quantum wells.


2002 ◽  
Vol 81 (9) ◽  
pp. 1564-1566 ◽  
Author(s):  
M. Y. Su ◽  
S. G. Carter ◽  
M. S. Sherwin ◽  
A. Huntington ◽  
L. A. Coldren

1992 ◽  
Vol 01 (03) ◽  
pp. 473-491
Author(s):  
R.A. PUECHNER ◽  
D.S. GERBER ◽  
R. DROOPAD ◽  
G.N. MARACAS

The electroabsorptive behavior of asymmetric triangular quantum wells (ATQW) in the active region of a p-i-n self-electro-optic effect device (SEED) structure is experimentally investigated. Excition transition energies are measured by photoluminescence and photocurrent spectroscopy at room temperature and at low temperatures. Room-temperature excitonic linewidths of 9.2 meV for a 265-Å ATQW have been obtained. The electric field modulation of excitonic absorption in ATQWs with compositional grading, both increasing and decreasing in the growth direction is presented. When compared with a similar rectangular quantum-well device, it is observed that ATQWs have intrinsically higher responsivity, comparable room temperature linewidths, and higher device on/off ratios.


1993 ◽  
Vol 22 (5) ◽  
pp. 479-484 ◽  
Author(s):  
R. D. Feldman ◽  
T. D. Harris ◽  
J. E. Zucker ◽  
D. Lee ◽  
R. F. Austin ◽  
...  

2004 ◽  
Vol 25 (7) ◽  
pp. 462-464 ◽  
Author(s):  
S. Reitzenstein ◽  
L. Worschech ◽  
A. Forchel

2011 ◽  
Vol 19 (10) ◽  
pp. 9737 ◽  
Author(s):  
Richard P. Green ◽  
Mohsin Haji ◽  
Lianping Hou ◽  
Gabor Mezosi ◽  
Rafal Dylewicz ◽  
...  

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