Transmission electron microscopy and Raman measurements of the misfit stress in a Si tensile strained layer

2004 ◽  
Vol 84 (6) ◽  
pp. 870-872 ◽  
Author(s):  
M. Cabié ◽  
A. Ponchet ◽  
A. Rocher ◽  
V. Paillard ◽  
L. Vincent
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Misfit Stress ◽  
Strained Layer ◽  
Transmission Electron

Transmission Electron Microscopy of Strained-Layer Superlattices

1984 ◽  
Vol 37 ◽  
Author(s):  
J. M. Gibson ◽  
M. M. J. Treacy ◽  
R. Hull ◽  
J. C. Bean
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thin Foil ◽  
Local Variation ◽  
Atomic Displacement ◽  
Shear Stresses ◽  
Local Composition ◽  
Strained Layer ◽  
Transmission Electron ◽  
Strained Layer Superlattice

Transmission electron microscopy provides a powerful means of studying compositionally modulated materials. In such materials there is usually a local variation in electron scattering power along with a lattice dilatation wave which both accompany the local composition. The most revealing geometry for studying such materials has the lattice modulation direction lying within the plane of the thin foil. However, shear stresses accompanying the dilatation wave can be significantly relaxed by the presence of the thin foil surfaces, modifying the local atomic displacement field such that it is representative of neither the bulk, nor the free unstressed material. Two pertinent semiconductor examples which we have studied are spinodally decomposed quaternary III–V layers and strainedlayer superlattices of Si/SixGe1−x. We provide experimental evidence demonstrating relaxation in these cases and a simple elasticity model to describe it. Our data and model show a thickness dependence to relaxation and can explain previously reported ‘anomalous’ lattice parameter measurements from a strained-layer superlattice [11]. In this paper we concentrate on the effects of dilatation and relaxation on imaging and diffraction from a strained-layer superlattice.

Cross-sectional Transmission Electron Microscopy of (AlAs)15(InAs)1 Superlattices

1990 ◽  
Vol 48 (4) ◽  
pp. 678-679
Author(s):  
C. Ballesteros ◽  
J. Piqueras ◽  
M. Vázquez ◽  
J.P. Silveira ◽  
L. González ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Layer ◽  
Growth Conditions ◽  
Layer By Layer ◽  
High Quality ◽  
Cross Sectional ◽  
Strained Layer ◽  
Transmission Electron ◽  
Strained Layer Superlattices

Multibeam and bright field transmission electron microscopy are used to determine the structure of (InAs)1/(AlAs)15 superlattices. The interest of InAs/AlAs system arises from the large gap difference. The main problem in the obtention of strained layer superlattices (SLS), with a large lattice mismach, 7% is that of controlling the growth process to obtain high quality layers with sharp interfaces.A modification of the conventional MBE technique, Atomic Layer Molecular Beam Epitaxy (ALMBE) seems to be very appropiate for the growth of such strained layer structures. In particular, high quality layers of materials that demand different growth conditions by MBE, like InAs and AlAs can be obtained at a common low substrate temperature (350-400°) by ALMBE due to the ability to force 2D or layer by layer nucleation and growth. Present superlattices are part of a series with structure (AlAs)15/(InAs)n (n = 1, 2, 3 and 5 ml) whose study by HREM is under way in order to determine critical thickness limits.

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