High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications

2004 ◽  
Vol 95 (5) ◽  
pp. 2203-2216 ◽  
Author(s):  
Th. Gessmann ◽  
E. F. Schubert
2011 ◽  
Vol 17 (33) ◽  
pp. 9076-9082 ◽  
Author(s):  
César Pérez-Bolívar ◽  
Shin-ya Takizawa ◽  
Go Nishimura ◽  
Victor A. Montes ◽  
Pavel Anzenbacher

MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 318-323 ◽  
Author(s):  
Daniel F. Feezell ◽  
Mathew C. Schmidt ◽  
Steven P. DenBaars ◽  
Shuji Nakamura

AbstractThis article reviews the development of nonpolar and semipolar InGaN/GaN light-emitting diodes (LEDs), emphasizing structures on freestanding bulk GaN. A brief history of LED development on each orientation is provided, followed by a discussion of the most relevant and recent results. The context is related to several current LED issues, such as the realization of high-efficiency white solid-state lighting, potential solutions to the “green gap,” and applications for polarized emitters. The section on nonpolar LEDs highlights high-power violet and blue emitters and considers the effects of indium incorporation and substrate miscut. The section on semipolar GaN reviews the development of LEDs in the violet, blue, green, and yellow regions and highlights the potential of InGaN/GaN LEDs as an alternative technology to AlInGaP for yellow emitters. A brief review of polarization anisotropy also is included for each orientation. Finally, a two source white light system utilizing a nonpolar blue LED and a semipolar yellow LED is presented.


2021 ◽  
Author(s):  
Jiao Wu ◽  
Bo Wang ◽  
Zhiyuan Liu ◽  
Kang Zhang ◽  
Xiaoshuang Li ◽  
...  

Mn4+-activated oxidefluoride phosphors are attractive for application in wide solid-state lighting devices because of its distinct red emission at about 630 nm and the abundant storage of Mn4+ ion. However,...


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