Excitonic transitions in β-FeSi2 epitaxial films and single crystals

2004 ◽  
Vol 95 (5) ◽  
pp. 2441-2447 ◽  
Author(s):  
A. G. Birdwell ◽  
T. J. Shaffner ◽  
D. Chandler-Horowitz ◽  
G. H. Buh ◽  
M. Rebien ◽  
...  
Keyword(s):  
Single Crystals ◽  
Epitaxial Films ◽  
Excitonic Transitions

Vortex motion in YBa2Cu3O7−δ twinned single crystals and epitaxial films

2004 ◽  
Vol 95 (5) ◽  
pp. 2569-2576 ◽  
Author(s):  
P. Bernstein ◽  
J. F. Hamet
Keyword(s):  
Single Crystals ◽  
Vortex Motion ◽  
Epitaxial Films

Gkowth of YBa2Cu3O7-δ Single Crystals and Films by a Flux and a Sputtering Methods

1987 ◽  
Vol 99 ◽  
Author(s):  
K. Takagi ◽  
M. Hirao ◽  
M. Hiratani ◽  
H. Kakibayashi ◽  
T. Aida ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Resolution Electron Microscopy ◽  
Growth Conditions ◽  
Epitaxial Films ◽  
Electric Resistivity ◽  
Periodic Lattice ◽  
Flux Growth ◽  
Bulk Crystals ◽  
Resolution Electron ◽  
Diffusion Of Impurities

ABSTRACTYBa2Cu3O7-δ single crystals and epitaxial films are grown and characterized. In flux growth for bulk crystals, effects of growth conditions on yield and electric resistivity of crystals are examined. The yield of flaky crystals depends on the formation of cavities. The transition temperature is 86 K after annealing in an oxygen atmosphere. Films are prepared on SrTiO3 by sputtering and epitaxial growth is confirmed by high resolution electron microscopy. Periodic lattice defects are observed near the interface between the substrate and the film. It seems that these defects result from the diffusion of impurities from the substrate.

scholarly journals Homo-epitaxial growth on misoriented GaN substrates by MOCVD

2000 ◽  
Vol 5 (S1) ◽  
pp. 425-431 ◽  
Author(s):  
A.R.A. Zauner ◽  
J.J. Schermer ◽  
W.J.P. van Enckevort ◽  
V. Kirilyuk ◽  
J.L. Weyher ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals ◽  
Growth Process ◽  
Epitaxial Films ◽  
Mocvd Growth

The N-side of GaN single crystals with off-angle orientations of 0°, 2°, and 4° towards the [100] direction was used as a substrate for homo-epitaxial MOCVD growth. The highest misorientation resulted in a reduction of the density of grown hillocks by almost two orders of magnitude as compared with homo-epitaxial films grown on the exact (000) surface. The features still found on the 4° misoriented sample after growth can be explained by a model involving the interaction of steps, introduced by the misorientation and the hexagonal hillocks during the growth process.

Homo-Epitaxial Growth on Misoriented GaN Substrates by MOCVD

1999 ◽  
Vol 595 ◽  
Author(s):  
A.R.A. Zauner ◽  
J.J. Schermer ◽  
W.J.P. van Enckevort ◽  
V. Kirilyuk ◽  
J.L. Weyher ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals ◽  
Growth Process ◽  
Epitaxial Films ◽  
Mocvd Growth

AbstractThe N-side of GaN single crystals with off-angle orientations of 0°, 2°, and 4° towards the [1010] direction was used as a substrate for homo-epitaxial MOCVD growth. The highest misorientation resulted in a reduction of the density of grown hillocks by almost two orders of magnitude as compared with homo-epitaxial films grown on the exact (0001) surface. The features still found on the 4° misoriented sample after growth can be explained by a model involving the interaction of steps, introduced by the misorientation and the hexagonal hillocks during the growth process.

Aluminum Ion Implantation in Silicon Carbide at High Temperature of Target

1992 ◽  
Vol 279 ◽  
Author(s):  
Alexander V. Suvorov ◽  
D. A. Plotkin ◽  
V. N. Makarov ◽  
V. N. Svetlov
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Single Crystals ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Epitaxial Films ◽  
High Dose ◽  
Layer Surface ◽  
Considerable Part ◽  
Before And After

ABSTRACTSingle crystals and epitaxial films of SiC - 4H and 6H were implanted at an energy of 40 and 90 KeV by ions of Al at various temperatures and high dose.The implanted layers were studied before and after annealing by Raman scattering, Auger electron spectroscopy and SIMS. Results of this investigation show intensive graphitization of the implanted layer surface, the formation of great associations of defects in the implanted layer and shallow defects. It was found that recrystallization of the implanted layer pushes out a considerable part of aluminum atoms. The nature of the processes in silicon carbide during implantation and annealing is discussed.

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