Low-glancing-angle x-ray diffraction study on the relationship between crystallinity and properties of C60 field effect transistor

2004 ◽  
Vol 84 (4) ◽  
pp. 520-522 ◽  
Author(s):  
Hirotaka Ohashi ◽  
Katsumi Tanigaki ◽  
Ryotaro Kumashiro ◽  
Syuji Sugihara ◽  
Shinya Hiroshiba ◽  
...  
Keyword(s):  
Diffraction Study ◽  
Field Effect ◽  
Field Effect Transistor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glancing Angle ◽  
Effect Transistor ◽  
The Relationship

scholarly journals An Improved UU-MESFET with High Power Added Efficiency

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 573 ◽  
Author(s):  
Hujun Jia ◽  
Mei Hu ◽  
Shunwei Zhu
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Power Added Efficiency ◽  
Effect Transistor ◽  
The Relationship

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

scholarly journals X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

Nano Letters ◽  
2011 ◽  
Vol 11 (7) ◽  
pp. 2875-2880 ◽  
Author(s):  
Nina Hrauda ◽  
Jianjun Zhang ◽  
Eugen Wintersberger ◽  
Tanja Etzelstorfer ◽  
Bernhard Mandl ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistor ◽  
X Ray ◽  
Effect Transistor ◽  
Sige Quantum Dot

pH sensor based on Au NPs/ ITO membrane as extended gate field-effect transistor

2021 ◽  
Author(s):  
Saleh K. Alsaee ◽  
Naser Mahmoud Ahmed ◽  
Elham Mzwd ◽  
Ahmad Fairuz Omar ◽  
A.I. Aljameel ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscope ◽  
Indium Tin Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Spectroscopic Techniques ◽  
Au Nps ◽  
X Ray ◽  
Vis Spectroscopy ◽  
Effect Transistor

Abstract In the present work, gold nanoparticles (Au NPs) were synthesized on indium tin oxide (ITO) thin film on glass substrate for the pH sensing application based on extended gate field effect transistor (EGFET). The ITO thin film was deposited on glass using RF sputtering and then the Au NPs were synthesized on it by pulsed laser ablation in liquid (PLAL) technique. The Au NPs were characterized using transmission electron microscope (TEM), field emission scanning electron microscope (FE-SEM), energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), and UV-Vis spectroscopic techniques. From the TEM analysis, the size of the spherical shaped Au NPs was found to be in the range of 5–22 nm. The UV-Vis spectroscopy analysis revealed absorption peak at 518 nm, indicating purplish red color. The XPS data revealed Au 4f doublet binding energy peaks of the photoelectrons at 83.79 and 87.45 eV. The current-voltage (I-V) curves indicated pH sensitivities values of 43.6 mV/pH and 0.6 \({\left(\mu A\right)}^{\frac{1}{2}} /pH\) with linear regression of 0.9. The hysteresis and drift characteristics of Au NPs/ITO/G membrane were also studied to investigate its stability and reliability. The results of this work demonstrated that the Au NPs/ITO/G membrane is quite useful for the acidity and basicity detection.

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