Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire
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2002 ◽
Vol 14
(13-14)
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pp. 991-993
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2013 ◽
Vol 43
(4)
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pp. 814-818
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1999 ◽
Vol 273-274
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pp. 770-773
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