AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission

2003 ◽  
Vol 83 (17) ◽  
pp. 3456-3458 ◽  
Author(s):  
JianPing Zhang ◽  
Shuai Wu ◽  
Shiva Rai ◽  
Vasavi Mandavilli ◽  
Vinod Adivarahan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Long Wave ◽  
Deep Ultraviolet ◽  
Wave Emission ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes

2019 ◽  
Vol 9 (5) ◽  
pp. 871 ◽  
Author(s):  
Abu Islam ◽  
Dong-Soo Shim ◽  
Jong-In Shim
Keyword(s):  
Potential Energy ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Energy Fluctuation ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

We investigate the differences in optoelectronic performances of InGaN/AlGaN multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different indium compositions. Various macroscopic characterizations have been performed to show that the strain-induced piezoelectric field (FPZ), the crystal quality, and the internal quantum efficiency increase with the sample’s indium composition. This improved performance is owing to the carrier recombination at relatively defect-free indium-rich localized sites, caused by the local in-plane potential-energy fluctuation in MQWs. The potential-energy fluctuation in MQWs are considered to be originating from the combined effects of the inhomogeneous distribution of point defects, FPZ, and indium compositions.

Sign in / Sign up

Export Citation Format

Share Document