Nitric acid oxidation of Si to form ultrathin silicon dioxide layers with a low leakage current density

2003 ◽  
Vol 94 (11) ◽  
pp. 7328-7335 ◽  
Author(s):  
Hikaru Kobayashi Asuha ◽  
Osamu Maida ◽  
Masao Takahashi ◽  
Hitoo Iwasa
2002 ◽  
Vol 81 (18) ◽  
pp. 3410-3412 ◽  
Author(s):  
Asuha ◽  
Takuya Kobayashi ◽  
Osamu Maida ◽  
Morio Inoue ◽  
Masao Takahashi ◽  
...  

1993 ◽  
Vol 310 ◽  
Author(s):  
Jiyoung Kim ◽  
C. Sudhama ◽  
Rajesh Khamankar ◽  
Jack Lee

AbstractIn this work, a high-temperature deposition technique has been developed for ultra-thin sputtered PZT films for ULSI DRAM (<256Mb) storage capacitor applications. In contrast to the previously developed low-temperature (200°C) deposition, deposition at high-temperature (400°C) yields a desirable reduction in grain size of the perovskite phase. The thickness of PZT films has been reduced to less than 30nm with high charge storage density (∼30μC/cm2) and low leakage current density. An optimized 65nm PZT thin film was found to have an equivalent SiO2 thickness of 1.9Å and a leakage current density of less than 10−6 A/cm2 under 2V operation.


2019 ◽  
Vol 2 (1) ◽  
pp. 261-266
Author(s):  
Rosa María Luna-Sánchez ◽  
Ignacio González-Martínez

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