Increase in ferromagnetic/antiferromagnetic exchange bias due to a reduction of the interfacial exchange interaction

2003 ◽  
Vol 94 (10) ◽  
pp. 6678-6682 ◽  
Author(s):  
F. Ernult ◽  
B. Dieny ◽  
L. Billard ◽  
F. Lançon ◽  
J. R. Regnard
APL Materials ◽  
2017 ◽  
Vol 5 (12) ◽  
pp. 126105 ◽  
Author(s):  
Liyun Jia ◽  
Jianlei Shen ◽  
Mengmeng Li ◽  
Xi Wang ◽  
Li Ma ◽  
...  

2015 ◽  
Vol 51 (65) ◽  
pp. 12958-12961 ◽  
Author(s):  
Christian Wäckerlin ◽  
Fabio Donati ◽  
Aparajita Singha ◽  
Romana Baltic ◽  
Anne-Christine Uldry ◽  
...  

A record strong antiferromagnetic exchange interaction between an organic magnetic semiconductor and an insulating ferromagnetic oxide is observed.


1986 ◽  
Vol 89 ◽  
Author(s):  
M. Gorska ◽  
J. R. Anderson ◽  
Z. Golacki

AbstractThe magnetization and magnetic susceptibility of Bridgman-grown Pb1-xGdxTe have been measured over a temperature range from 2 to 300 K and in magnetic fields from 0.01 to 50 κOe. The x-values of the crystals ranged from 0.03 to 0.07. The magnetic susceptibility followed a Curie-Weiss behavior, χ = C/(T + θ), with positive θ implying an antiferromagnetic exchange interaction between Gd ions. The magnetic field dependence of the magnetization was fitted to a modified Brillouin function with parameter values that agreed fairly well with those from Curie-Weiss plots. The magnitude of θ was comparable to the value found for Pb1-xMnxTe for similar x values; but since the ion spin is bigger for Gd this suggests that the exchange interaction in Gd-doped PbTe is roughly half the value in Mn-doped PbTe.


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