Anomalous temperature dependence of optical emission in visible-light-emitting amorphous silicon quantum dots

2003 ◽  
Vol 83 (14) ◽  
pp. 2901-2903 ◽  
Author(s):  
Ho-Sang Kwack ◽  
Yuanping Sun ◽  
Yong-Hoon Cho ◽  
Nae-Man Park ◽  
Seong-Ju Park
Keyword(s):  
Quantum Dots ◽  
Visible Light ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Optical Emission ◽  
Anomalous Temperature Dependence ◽  
Anomalous Temperature ◽  
Silicon Quantum Dots ◽  
Light Emitting

scholarly journals Fluorescent Si QD decoration onto a flexible polymeric electrospun nanofibrous mat for the colorimetric sensing of TNT

2017 ◽  
Vol 5 (7) ◽  
pp. 1816-1825 ◽  
Author(s):  
Osman Arslan ◽  
Zeynep Aytac ◽  
Tamer Uyar
Keyword(s):  
Quantum Dots ◽  
Visible Light ◽  
Colorimetric Sensing ◽  
Facile Synthesis ◽  
Silicon Quantum Dots ◽  
Light Emitting ◽  
Nylon 6,6 ◽  
Sensing Application ◽  
Uv Range

UV range light was used for the facile synthesis of visible light emitting, surface-protected silicon quantum dots (Si QDs) and electrospun Nylon 6,6 nanofibrous mats were decorated with these Si QD's for selective TNT sensing application.

Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots

2012 ◽  
Vol 101 (13) ◽  
pp. 131101 ◽  
Author(s):  
Jun Ma ◽  
Xiaoli Ji ◽  
Guohong Wang ◽  
Xuecheng Wei ◽  
Hongxi Lu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Anomalous Temperature Dependence ◽  
Anomalous Temperature ◽  
Self Assembled

Full Color Luminescence from Amorphous Silicon Quantum Dots Embedded in Silion Nitride

2000 ◽  
Vol 638 ◽  
Author(s):  
Nae-Man Park ◽  
Tae-Soo Kim ◽  
Chel-Jong Choi ◽  
Tae-Yeon Seong ◽  
Seong-Ju Park
Keyword(s):  
Quantum Dots ◽  
Amorphous Silicon ◽  
Quantum Confinement Effect ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Silicon Quantum Dots ◽  
Light Emitting ◽  
Full Color ◽  
Mean Size

AbstractAmorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silion nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photolumiscence were observed from the a-Si QD strictures by controlling the fot size. An organe light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on vottage was less than 5 V. An external quantum effiency of 2×10−3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

Anomalous temperature dependence of photoluminescence from InAs quantum dots

2000 ◽  
Vol 88 (5) ◽  
pp. 2529-2532 ◽  
Author(s):  
W. H. Jiang ◽  
X. L. Ye ◽  
B. Xu ◽  
H. Z. Xu ◽  
D. Ding ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Anomalous Temperature Dependence ◽  
Anomalous Temperature ◽  
Inas Quantum Dots
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