Effects of silicon-on-insulator substrate on the residual stress within 3C-SiC/Si thin films

2003 ◽  
Vol 83 (10) ◽  
pp. 1989-1991 ◽  
Author(s):  
J.-H. Park ◽  
J. H. Kim ◽  
Y. Kim ◽  
B.-T. Lee ◽  
S.-J. Jang ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon On Insulator ◽  
Insulator Substrate

Heteroepitaxial Growth of InSb Thin Films on a Silicon-on-Insulator Substrate

2013 ◽  
Author(s):  
T. Sakamoto ◽  
H. Shimoyama ◽  
Y. Yasui ◽  
M. Mori ◽  
K. Maezawa
Keyword(s):  
Thin Films ◽  
Silicon On Insulator ◽  
Heteroepitaxial Growth ◽  
Insb Thin Films ◽  
Insulator Substrate

Thermo-Mechanical Study of AlN Thin-Films As Heat Spreaders in III-V Photonic Devices

2017 ◽  
Author(s):  
Shenghui Lei ◽  
Ertugrul Kardemir ◽  
David McCloskey ◽  
John F. Donegan ◽  
Ryan Enright
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Residual Stress ◽  
Thermal Resistance ◽  
Semiconductor Lasers ◽  
Compressive Residual Stress ◽  
Silicon On Insulator ◽  
Tensile Failure ◽  
Processing Temperature ◽  
Residual Stress State

Ridge-type hybrid III-V active waveguides on silicon-on-insulator (SOI) substrates demonstrate poor thermal performance due to several factors. One aspect of their typical design that leads to large thermal resistance is the use of polymer-based optical cladding around the waveguide. To address this issue, we have been exploring the use of deposited aluminium nitride (AlN) as an alternative optical cladding material. AlN is an excellent dielectric with optical properties making it suitable as a cladding around III-V waveguides. Crucially, this material can demonstrate thermal conductivities ∼100 times larger than current polymer cladding materials such as benzocyclobutene (BCB). Electro-thermo simulation results suggest that replacing BCB with AlN could reduce device thermal resistance by ∼2 times. However, our previous linear elastic mechanical modelling indicates that mismatched thermal expansion has the potential to cause mechanical tensile failure in the III-V waveguide when cooled from the processing temperature to room temperature if AlN is deposited in a neutral residual stress state. Here, to facilitate the design of encapsulated reliable hybrid semiconductor lasers, we extend our finite element, electro-thermo-mechanical model to include a residual stress in the deposited AlN. Using the Christensen criterion to define the maximum allowable stress in the device, our simulations indicate that there is a window of residual compressive stress in the AlN where mechanical failure may be avoided. To assess the feasibility of accessing this region of compressive residual stress while maintaining suitable thermal properties in the deposited AlN, we measure the thermal conductivity of AlN thin films (∼1.6 μm thick) deposited on silicon using a time-domain thermo reflectance (TDTR) setup. Stress measurements demonstrate compressive residual stresses ranging from ∼0 to −0.5 GPa. The TDTR measurement results reveal a similar thermal conductivity of ∼155 Wm−1K−1 over the entire range of compressive residual stress. These results strengthen the promise of encapsulating III-V active waveguides with AlN that simultaneously satisfy both thermal and mechanical requirements.

Residual stress and mechanical properties of polyimide thin films

2009 ◽  
Vol 113 (2) ◽  
pp. 976-983 ◽  
Author(s):  
Wonbong Jang ◽  
Jongchul Seo ◽  
Choonkeun Lee ◽  
Sang-Hyon Paek ◽  
Haksoo Han
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress

Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate

2021 ◽  
Vol 42 (4) ◽  
pp. 469-472
Author(s):  
Yingtao Yu ◽  
Si Chen ◽  
Qitao Hu ◽  
Paul Solomon ◽  
Zhen Zhang
Keyword(s):  
Silicon Nanowire ◽  
Low Noise ◽  
Silicon On Insulator ◽  
Schottky Junction ◽  
Ultra Low Noise ◽  
Insulator Substrate

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

2005 ◽  
Vol 239 (3-4) ◽  
pp. 327-334 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Silicon On Insulator ◽  
Ultra High Vacuum

The Materials Science of “Permeable Polysilicon” Thin Films

2001 ◽  
Vol 687 ◽  
Author(s):  
George M Dougherty ◽  
Timothy Sands ◽  
Albert P. Pisano
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Materials Science ◽  
Single Step ◽  
Process Window ◽  
Silicon Thin Films ◽  
Growth Regime ◽  
Deposition Parameters ◽  
Simple Kinetic Model ◽  
The Relationship

AbstractPolycrystalline silicon thin films that are permeable to fluids, known as permeable polysilicon, have been reported by several researchers. Such films have great potential for the fabrication of difficult to make MEMS structures, but their use has been hampered by poor process repeatability and a lack of physical understanding of the origin of film permeability and how to control it. We have completed a methodical study of the relationship between process, microstructure, and properties for permeable polysilicon thin films. As a result, we have determined that the film permeability is caused by the presence of nanoscale pores, ranging from 10-50 nm in size, that form spontaneously during LPCVD deposition within a narrow process window. The unusual microstructure within this process window corresponds to the transition between a semicrystalline growth regime, exhibiting tensile residual stress, and a columnar growth regime exhibiting compressive residual stress. A simple kinetic model is proposed to explain the unusual morphology within this transition regime. It is determined that measurements of the film residual stress can be used to tune the deposition parameters to repeatably produce permeable films for applications. The result is a convenient, single-step process that enables the elegant fabrication of many previously challenging structures.

Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

2009 ◽  
Vol 255 (19) ◽  
pp. 8252-8256 ◽  
Author(s):  
Thanh Nga Nguyen ◽  
Van Duy Nguyen ◽  
Sungwook Jung ◽  
Junsin Yi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Silicon Thin Films

A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate

2014 ◽  
Vol 116 (7) ◽  
pp. 074513 ◽  
Author(s):  
V. Mikhelashvili ◽  
D. Cristea ◽  
B. Meyler ◽  
S. Yofis ◽  
Y. Shneider ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Highly Sensitive ◽  
Insulator Substrate

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

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