Room-temperature dephasing time of intersubband transitions in heavily-doped InGaAs/AlAs/AlAsSb coupled quantum wells
Keyword(s):
Keyword(s):
1999 ◽
Vol 5
(1-2)
◽
pp. 16-26
◽
Keyword(s):
1994 ◽
Vol 91
(2)
◽
pp. 105-109
◽