Room-temperature dephasing time of intersubband transitions in heavily-doped InGaAs/AlAs/AlAsSb coupled quantum wells

2003 ◽  
Vol 83 (9) ◽  
pp. 1854-1856 ◽  
Author(s):  
Achanta Venu Gopal ◽  
Haruhiko Yoshida ◽  
Takasi Simoyama ◽  
Junichi Kasai ◽  
Teruo Mozume ◽  
...  
1992 ◽  
Vol 261 ◽  
Author(s):  
O. L. Russo ◽  
V. Rehn ◽  
T. W. Nee ◽  
T. L. Cole ◽  
W. M. Theis ◽  
...  

ABSTRACTElectroreflectance (ER) measurements were made on GaAs/AxGal-x As coupled quantum wells at room temperature and at 77K. The close coupling of the narrow (28.3 A) barriers resulted in splitting of the hole and electron subband levels which was observed at both temperatures. As a first approximation, the confining potential was assumed to be due to the barrier alone; electric field effects of the modulating potential and trapped interfacial charge were considered to be negligible. The dominant heavy holeconduction and light hole-conduction transitions observed at 300K were at 1523meV and 1539 meV respectively, although other weaker transitions were also resolved.


2004 ◽  
Vol 84 (1) ◽  
pp. 64-66 ◽  
Author(s):  
T. Müller ◽  
W. Parz ◽  
G. Strasser ◽  
K. Unterrainer

1999 ◽  
Vol 5 (1-2) ◽  
pp. 16-26 ◽  
Author(s):  
K.L. Campman ◽  
K.D. Maranowski ◽  
H. Schmidt ◽  
A. Imamoglu ◽  
A.C. Gossard

2017 ◽  
Vol 121 (9) ◽  
pp. 093101 ◽  
Author(s):  
Lu Han ◽  
Colin Lieberman ◽  
Hongping Zhao

2020 ◽  
Vol 13 (12) ◽  
pp. 123003
Author(s):  
Yuzo Ohno ◽  
Satoshi Iba ◽  
Ryogo Okamoto ◽  
Yuma Obata ◽  
Kouki Obu ◽  
...  

1994 ◽  
Vol 91 (2) ◽  
pp. 105-109 ◽  
Author(s):  
G.M. Gusev ◽  
Ulf Gennser ◽  
D.K. Maude ◽  
J.C. Portal ◽  
J.C. Rossi ◽  
...  

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