Electrical characterization of InGaN/GaN light emitting diodes grown by molecular beam epitaxy

2003 ◽  
Vol 94 (8) ◽  
pp. 5014 ◽  
Author(s):  
L. Hirsch ◽  
A. S. Barrière
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Electrical Characterization ◽  
Light Emitting

Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes

1999 ◽  
Vol 201-202 ◽  
pp. 985-989 ◽  
Author(s):  
Seppo Orsila ◽  
Jukka Köngäs ◽  
Mika Toivonen ◽  
Pekka Savolainen ◽  
Marko Jalonen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Resonant Cavity ◽  
Molecular Beam Epitaxy Growth ◽  
Light Emitting

scholarly journals In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 126
Author(s):  
Abdul Kareem K. Soopy ◽  
Zhaonan Li ◽  
Tianyi Tang ◽  
Jiaqian Sun ◽  
Bo Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gas Sensors ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Crystal Quality ◽  
Porous Structures ◽  
Light Emitting ◽  
Photochemical Etching ◽  
Recent Advances ◽  
Low Dimensional

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Electrical characterization of organic light-emitting diodes using dipotassium phthalate as n-type dopant

2008 ◽  
Vol 93 (8) ◽  
pp. 083505 ◽  
Author(s):  
Meng-Huan Ho ◽  
Ming-Ta Hsieh ◽  
Teng-Ming Chen ◽  
Jenn-Fang Chen ◽  
Shiao-Wen Hwang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Electrical Characterization ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type

High-power InGaN light emitting diodes grown by molecular beam epitaxy

2004 ◽  
Vol 40 (20) ◽  
pp. 1299 ◽  
Author(s):  
K. Johnson ◽  
V. Bousquet ◽  
S.E. Hooper ◽  
M. Kauer ◽  
C. Zellweger ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Power ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting
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