scholarly journals Monte Carlo study of kink effect in short-channel InAlAs/InGaAs high electron mobility transistors

2003 ◽  
Vol 94 (6) ◽  
pp. 4096-4101 ◽  
Author(s):  
B. G. Vasallo ◽  
J. Mateos ◽  
D. Pardo ◽  
T. González
Keyword(s):  
Monte Carlo ◽  
Electron Mobility ◽  
Monte Carlo Study ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Short Channel ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Kink Effect

scholarly journals Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

2010 ◽  
Vol 108 (9) ◽  
pp. 094505 ◽  
Author(s):  
B. G. Vasallo ◽  
H. Rodilla ◽  
T. González ◽  
G. Moschetti ◽  
J. Grahn ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Mobility ◽  
Monte Carlo Study ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Kink Effect

scholarly journals Scaling of pHEMTs to Decanano Dimensions

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 435-439 ◽  
Author(s):  
K. Kalna ◽  
A. Asenov ◽  
K. Elgaid ◽  
I. Thayne
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Limiting Factor ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

The effect of scaling into deep decanano dimensions on the performance of pseudomorphic high electron mobility transistors (pHEMTs) is extensively studied using Monte Carlo simulations. The scaling of devices with gate lengths of 120, 70, 50 and 30nm is performed in both lateral and vertical directions. The devices exhibit a significant improvement in transconductance during scaling, even though external resistances become a limiting factor.

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