Characterization of laser ablation as a means for doping helium nanodroplets

2003 ◽  
Vol 74 (9) ◽  
pp. 4071-4076 ◽  
Author(s):  
P. Claas ◽  
S.-O. Mende ◽  
F. Stienkemeier
Author(s):  
Nancy Van Suetendael ◽  
Kristie Powell ◽  
Susan Earles ◽  
Mary Helen McCay ◽  
Ivica Kostanic
Keyword(s):  

Author(s):  
P. Schwindenhammer ◽  
H. Murray ◽  
P. Descamps ◽  
P. Poirier

Abstract Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.


2018 ◽  
Vol 139 ◽  
pp. 75-82 ◽  
Author(s):  
A.H. Galmed ◽  
A. du Plessis ◽  
S.G. le Roux ◽  
E. Hartnick ◽  
H. Von Bergmann ◽  
...  

2012 ◽  
Vol 16 ◽  
pp. 15-20 ◽  
Author(s):  
Omid Tayefeh Ghalehbeygi ◽  
Vural Kara ◽  
Levent Trabzon ◽  
Selcuk Akturk ◽  
Huseyin Kizil

We fabricated Si Nano-columns by a femtosecond laser with various wavelengths and process parameters, whilst the specimen was submerged in water. The experiments were carried out by three types of wavelengths i.e. 1030 nm, 515nm, 343nm, with 500 fs laser pulses. The scales of these spikes are much smaller than micro spikes that are constructed by laser irradiation of silicon surface in vacuum or gases like SF6, Cl2. The Si nano-columns of 300 nm or less in width were characterized by SEM measurements. The formation of these Si Nano-columns that were revealed by SEM observation, indicates chemical etching with laser ablation occurred when surface exposed by laser beam. We observed 200 nm spikes height at the center of laser beam profile and the ones uniform in height at lateral incident area.


Sign in / Sign up

Export Citation Format

Share Document