scholarly journals Gain and temporal response of AlGaN solar-blind avalanche photodiodes: An ensemble Monte Carlo analysis

2003 ◽  
Vol 83 (7) ◽  
pp. 1382-1384 ◽  
Author(s):  
C. Sevik ◽  
C. Bulutay
Keyword(s):  
Monte Carlo ◽  
Avalanche Photodiodes ◽  
Monte Carlo Analysis ◽  
Temporal Response ◽  
Ensemble Monte Carlo ◽  
Solar Blind

scholarly journals Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices

2019 ◽  
Vol 66 (3) ◽  
pp. 1145-1152 ◽  
Author(s):  
Cristina Medina-Bailon ◽  
Jose L. Padilla ◽  
Toufik Sadi ◽  
Carlos Sampedro ◽  
Andres Godoy ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Analysis ◽  
Ensemble Monte Carlo

Monte Carlo Analysis of Effect of Alloy Scattering on Electron Transport in Wurtzite Zn1-xMgxO

2013 ◽  
Vol 873 ◽  
pp. 861-864
Author(s):  
Lin Lin Hu ◽  
Ping Wang ◽  
Tao Shang ◽  
Jiu Xu Song
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electric Field ◽  
Electric Fields ◽  
Drift Velocity ◽  
Monte Carlo Model ◽  
Monte Carlo Analysis ◽  
Alloy Scattering ◽  
Ensemble Monte Carlo ◽  
Velocity Decrease

Steady-state and transient electron characteristics of wurtzite Zn1xMgxO are studied in detail. An ensemble Monte Carlo model is established considering alloy scattering. From the steady-state characteristics, it is found that alloy scattering makes the drift velocity decrease at different electric fields. For 10% Mg, the transient peak drift velocity decreases from 2.48×107cm/s to 2.13×107cm/s at 2000 kV/cm. While for 20% Mg, a higher electric field is needed for the onset of the overshoot, which corresponds to the larger peak electric field in the steady-state velocity-field characteristics.

Ensemble Monte Carlo analysis of subpicosecond transient electron transport in cubic and hexagonal silicon carbide for high power SiC-MESFET devices

2015 ◽  
Vol 29 (16) ◽  
pp. 1550107 ◽  
Author(s):  
Youcef Belhadji ◽  
Benyounes Bouazza ◽  
Fateh Moulahcene ◽  
Nordine Massoum
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
High Temperature ◽  
Electron Transport ◽  
Band Structure ◽  
Monte Carlo Analysis ◽  
Structure Model ◽  
Velocity Overshoot ◽  
Ensemble Monte Carlo ◽  
Band Structure Model

In a comparative framework, an ensemble Monte Carlo was used to elaborate the electron transport characteristics in two different silicon carbide (SiC) polytypes 3C-SiC and 4H-SiC. The simulation was performed using three-valley band structure model. These valleys are spherical and nonparabolic. The aim of this work is to forward the trajectory of 20,000 electrons under high-flied (from 50 kV to 600 kV) and high-temperature (from 200 K to 700 K). We note that this model has already been used in other studies of many Zincblende or Wurtzite semiconductors. The obtained results, compared with results found in many previous studies, show a notable drift velocity overshoot. This last appears in subpicoseconds transient regime and this overshoot is directly attached to the applied electric field and lattice temperature.

scholarly journals Harmonic Extraction in Graphene: Monte Carlo Analysis of the Substrate Influence

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 5108
Author(s):  
Elena Pascual ◽  
José M. Iglesias ◽  
María J. Martín ◽  
Raúl Rengel
Keyword(s):  
Monte Carlo ◽  
Electric Fields ◽  
Strong Field ◽  
Monte Carlo Analysis ◽  
High Order ◽  
Harmonic Intensity ◽  
Ensemble Monte Carlo ◽  
Ac Electric Fields ◽  
High Order Harmonic ◽  
Harmonic Extraction

Graphene on different substrates, such as SiO2, h-BN and Al2O3, has been subjected to oscillatory electric fields to analyse the response of the carriers in order to explore the generation of terahertz radiation by means of high-order harmonic extraction. The properties of the ensemble Monte Carlo simulator employed for such study have allowed us to evaluate the high-order harmonic intensity and the spectral density of velocity fluctuations under different amplitudes of the periodic electric field, proving that strong field conditions are preferable for the established goal. Furthermore, by comparison of both harmonic intensity and noise level, the threshold bandwidth for harmonic extraction has been determined. The results have shown that graphene on h-BN presents the best featuring of the cases under analysis and that in comparison to III–V semiconductors, it is a very good option for high-order harmonic extraction under AC electric fields with large amplitudes.

Generation of Correlated Logistic-Normal Random Variates for Medical Decision Trees

1998 ◽  
Vol 37 (03) ◽  
pp. 235-238 ◽  
Author(s):  
M. El-Taha ◽  
D. E. Clark
Keyword(s):  
Monte Carlo ◽  
Decision Trees ◽  
Computer Algebra ◽  
Taylor Series ◽  
Computer Algebra System ◽  
Random Variable ◽  
Monte Carlo Analysis ◽  
Normal Random Variable ◽  
Medical Decision ◽  
Theoretical Results

AbstractA Logistic-Normal random variable (Y) is obtained from a Normal random variable (X) by the relation Y = (ex)/(1 + ex). In Monte-Carlo analysis of decision trees, Logistic-Normal random variates may be used to model the branching probabilities. In some cases, the probabilities to be modeled may not be independent, and a method for generating correlated Logistic-Normal random variates would be useful. A technique for generating correlated Normal random variates has been previously described. Using Taylor Series approximations and the algebraic definitions of variance and covariance, we describe methods for estimating the means, variances, and covariances of Normal random variates which, after translation using the above formula, will result in Logistic-Normal random variates having approximately the desired means, variances, and covariances. Multiple simulations of the method using the Mathematica computer algebra system show satisfactory agreement with the theoretical results.

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