X-ray reciprocal space mapping of strain relaxation in GaAs1−xNx on GaAs [100] by molecular-beam epitaxy

2003 ◽  
Vol 94 (6) ◽  
pp. 3828-3833 ◽  
Author(s):  
W. K. Cheah ◽  
W. J. Fan ◽  
S. F. Yoon ◽  
S. Z. Wang ◽  
W. K. Loke
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

X‐ray reciprocal‐space mapping of strain relaxation and tilting in linearly graded InAlAs buffers

1996 ◽  
Vol 79 (7) ◽  
pp. 3578-3584 ◽  
Author(s):  
J. A. Olsen ◽  
E. L. Hu ◽  
S. R. Lee ◽  
I. J. Fritz ◽  
A. J. Howard ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs

2012 ◽  
Vol 45 (5) ◽  
pp. 1046-1053 ◽  
Author(s):  
Wen Hu ◽  
Hidetoshi Suzuki ◽  
Takuo Sasaki ◽  
Miwa Kozu ◽  
Masamitu Takahasi
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Relaxation Process ◽  
Real Time ◽  
High Speed ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping

This paper describes the development of a high-speed three-dimensional reciprocal-space mapping method designed for the real-time monitoring of the strain relaxation process during the growth of heterostructure semiconductors. Each three-dimensional map is obtained by combining a set of consecutive images, which are captured during the continuous rotation of the sample, and calculating the reciprocal-space coordinates from the detector coordinate system. To demonstrate the feasibility of this rapid mapping technique, the 022 asymmetric diffraction of an InGaAs/GaAs(001) thin film grown by molecular beam epitaxy was measured and the procedure for data calibration was examined. Subsequently, the proposed method was applied to real-time monitoring of the strain relaxation process during the growth of a thin-film heterostructure consisting of In0.07Ga0.93As and In0.18Ga0.82As layers consecutively deposited on GaAs(001). The time resolution of the measurement was 10 s. It was revealed that additional relaxation of the first In0.07Ga0.93As layer was induced by the growth of the second In0.18Ga0.82As layer within a short period of time corresponding to the deposition of only two monolayers of InGaAs.

scholarly journals Erratum: “X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth” [J. Appl. Phys. 110, 113502 (2011)]

2013 ◽  
Vol 113 (19) ◽  
pp. 199901
Author(s):  
Takuo Sasaki ◽  
Hidetoshi Suzuki ◽  
Masamitu Takahasi ◽  
Yoshio Ohshita ◽  
Itaru Kamiya ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth

2011 ◽  
Vol 110 (11) ◽  
pp. 113502 ◽  
Author(s):  
Takuo Sasaki ◽  
Hidetoshi Suzuki ◽  
Masamitu Takahasi ◽  
Yoshio Ohshita ◽  
Itaru Kamiya ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray
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