Tuning of the intersubband emission below the longitudinal optical phonon energy in GaAs/AlGaAs quantum cascade emitters

2003 ◽  
Vol 83 (6) ◽  
pp. 1063-1065
Author(s):  
S. S. Dhillon ◽  
A. G. Davies ◽  
H. E. Beere ◽  
E. H. Linfield ◽  
D. A. Ritchie ◽  
...  
Keyword(s):  
Optical Phonon ◽  
Longitudinal Optical ◽  
Phonon Energy ◽  
Longitudinal Optical Phonon ◽  
Quantum Cascade

Quantum cascade lasers with voltage defect of less than one longitudinal optical phonon energy

2009 ◽  
Vol 94 (25) ◽  
pp. 251114 ◽  
Author(s):  
Matthew D. Escarra ◽  
Anthony J. Hoffman ◽  
Kale J. Franz ◽  
Scott S. Howard ◽  
Richard Cendejas ◽  
...  
Keyword(s):  
Optical Phonon ◽  
Quantum Cascade Lasers ◽  
Longitudinal Optical ◽  
Phonon Energy ◽  
Longitudinal Optical Phonon ◽  
Quantum Cascade ◽  
Cascade Lasers

GaAs/AlGaAs Quantum Cascade Lasers Based on Double Resonant Electron – LO Phonon Transitions

2005 ◽  
Vol 494 ◽  
pp. 25-30 ◽  
Author(s):  
A. Mirčetić ◽  
D. Indjin ◽  
V. Milanović ◽  
P. Harrison ◽  
Z. Ikonić ◽  
...  
Keyword(s):  
Optical Phonon ◽  
Quantum Cascade Lasers ◽  
Longitudinal Optical ◽  
Equation Model ◽  
Longitudinal Optical Phonon ◽  
Quantum Cascade ◽  
Resonant Electron ◽  
Efficient Extraction ◽  
Output Characteristics ◽  
Cascade Lasers

In this paper a procedure for the global optimization of mid-infrared GaAs/AlGaAs quantum cascade lasers that relies on the method of simulated annealing is presented. We propose a double longitudinal optical phonon resonance design obtained via a ladder of three states, with subsequent pairs separated by optical phonon energy. Addition of an extra level decreases the lower laser level population by enabling an efficient extraction into the injector region. The output characteristics of the optimized structures are calculated using the full self–consistent rate equation model, which includes all of the relevant scattering mechanisms. We also presented the experimentally measured output characteristics of an initial device, which are in agreement with the numerically calculated values, confirming the good design capabilities of the applied procedure.

scholarly journals Computerized Fdtd Method for Longitudinal Optical Phonon Energy on Semiconductor Hybrid Structure for High Power Devices Fabrication

2021 ◽  
Vol 3 (2) ◽  
Author(s):  
Phyo Sandar Win ◽  
Hsu Myat Tin Swe ◽  
Hla Myo Tun
Keyword(s):  
Optical Phonon ◽  
High Performance ◽  
Lattice Vibration ◽  
Longitudinal Optical ◽  
Phonon Energy ◽  
Longitudinal Optical Phonon ◽  
Semiconductor Interface ◽  
Electric Dipoles ◽  
Polarization Of Light ◽  
Transmission And Reflection

The research problem in this study is the longitudinal optical phonon energy on metal/semiconductor interface for high performance semiconductor device. The research solution is to make the software model with finite difference time domain (FDTD) solution for transmission and reflection pulse between metal and semiconductor interface for carrier dynamics effects. The objective of this study is to find the quantum mechanics understanding on interface engineering for fabricating the high performance device for future semiconductor technology development. The analysis was carried out with the help of MATLAB. The quantum mechanical spatial field on metal-semiconductor stripe structure have been analyzed by FDTD techniques. This emission reveals a characteristic polar radiation distribution of electric dipoles and a wavelength independent of the structure size or the direction of emission; consequently, it is attributed to thermally generate electric dipoles resonating with the longitudinal optical phonon energy. Phonon energy occur lattice vibration of material by the polarization of light, if the material has rigid structure reflect back the incident light. So, high reflective metal- semiconductor structure always use as photodectors devices in optical fiber communication. No lattice vibration material structure has no phonon effect, so this structure based devices can get high performance any other structure based devices. The transmission and reflection coefficient of metal-semiconductor GaN/Au layer structure compare with GaN/Ti and GaN/Pt structure. Parallel (P) and transverse (S) polarization of light incident on metal-semiconductor nanolayer structure with IR wavelength. Efficient use of the layer by layer (LbL) method to fabricate nanofilms requires meeting certain conditions and limitations that were revealed in the course of research on model systems.

3.4-THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation

2003 ◽  
Vol 82 (7) ◽  
pp. 1015-1017 ◽  
Author(s):  
Benjamin S. Williams ◽  
Hans Callebaut ◽  
Sushil Kumar ◽  
Qing Hu ◽  
John L. Reno
Keyword(s):  
Quantum Cascade Laser ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Quantum Cascade ◽  
Optical Phonon Scattering
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