Photoluminescence in tensile-strained Si type-II quantum wells on bulk single-crystal SiGe substrates

2003 ◽  
Vol 83 (5) ◽  
pp. 857-859 ◽  
Author(s):  
S. R. Sheng ◽  
N. L. Rowell ◽  
S. P. McAlister
Keyword(s):  
Single Crystal ◽  
Quantum Wells ◽  
Bulk Single Crystal ◽  
Type Ii ◽  
Strained Si ◽  
Type Ii Quantum Wells

Band‐edge photoluminescence of SiGe/strained‐Si/SiGe type‐II quantum wells on Si(100)

1993 ◽  
Vol 63 (25) ◽  
pp. 3509-3511 ◽  
Author(s):  
Deepak K. Nayak ◽  
Noritaka Usami ◽  
Susumu Fukatsu ◽  
Yasuhiro Shiraki
Keyword(s):  
Quantum Wells ◽  
Band Edge ◽  
Type Ii ◽  
Strained Si ◽  
Type Ii Quantum Wells

Bang-Edge Photoluminescence of SiGe/strained-Si/SiGe Type-II Quantum Wells on Si(100)

1993 ◽  
Author(s):  
D. K. Nayak ◽  
N. Usami ◽  
H. Sunamura ◽  
S. Fukatsu ◽  
Y. Shiraki
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Strained Si ◽  
Type Ii Quantum Wells

Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)

1993 ◽  
Vol 32 (Part 2, No. 10A) ◽  
pp. L1391-L1393 ◽  
Author(s):  
Deepak K. Nayak ◽  
Noritaka Usami ◽  
Hiroshi Sunamura ◽  
Susumu Fukatsu ◽  
Yasuhiro Shiraki
Keyword(s):  
Quantum Wells ◽  
Band Edge ◽  
Type Ii ◽  
Strained Si ◽  
Type Ii Quantum Wells

Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100)

1994 ◽  
Vol 37 (4-6) ◽  
pp. 933-936 ◽  
Author(s):  
D.K. Nayak ◽  
N. Usami ◽  
H. Sunamura ◽  
S. Fukatsu ◽  
Y. Shiraki
Keyword(s):  
Quantum Wells ◽  
Band Edge ◽  
Type Ii ◽  
Strained Si ◽  
Type Ii Quantum Wells

Photoluminescence in UHV/CVD tensile-strained Si type-II quantum wells on bulk crystal SiGe substrates

2002 ◽  
Vol 744 ◽  
Author(s):  
S.R. Sheng ◽  
N.L. Rowell ◽  
S.P. McAlister
Keyword(s):  
Quantum Wells ◽  
Free Exciton ◽  
Bulk Crystal ◽  
Excitation Density ◽  
Near Band Edge ◽  
Type Ii ◽  
Strained Si ◽  
Band Bending ◽  
Exciton Emission ◽  
Type Ii Quantum Wells

ABSTRACTNear band-edge photoluminescence (PL) in high-quality UHV/CVD tensile-strained Si type-II quantum wells (QWs) with varying well width grown on bulk crystal SiGe substrates has been studied. In contrast to the blue-shifts observed in the PL lines of Si1-xGex QWs on Si, the PL lines of Si QWs exhibit red-shifts with increasing excitation density. The PL from the SiGe substrate shows no such shift. The PL red-shifts decrease as the well width decreases, and are essentially independent of temperature up to 15K where a transition from bound exciton emission to higher energy free exciton emission occurs. The rapid thermal annealing (RTA) was found to improve the crystal quality of the samples. RTA enhances the integrated PL intensity, results in narrowing and blue-shifting of PL bands, and reduces the exponent in the excitation power dependence as well as the amount of red-shifting at a given excitation density. Possible mechanisms for the observed shifts to lower energies of the PL lines with excitation density were examined, including band bending, band-filling, and binding of excitons to impurities.

Mid-IR interband cascade electroluminescence in type-II quantum wells

1996 ◽  
Vol 32 (17) ◽  
pp. 1621 ◽  
Author(s):  
R.Q. Yang ◽  
C.-H. Lin ◽  
P.C. Chang ◽  
S.J. Murry ◽  
D. Zhang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Type Ii Quantum Wells

cw and femtosecond optical nonlinearities of type-II quantum wells

1991 ◽  
Vol 66 (10) ◽  
pp. 1358-1361 ◽  
Author(s):  
G. R. Olbright ◽  
W. S. Fu ◽  
A. Owyoung ◽  
J. F. Klem ◽  
R. Binder ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Nonlinearities ◽  
Type Ii ◽  
Type Ii Quantum Wells

Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates

2002 ◽  
Vol 41 (Part 2, No. 10A) ◽  
pp. L1040-L1042 ◽  
Author(s):  
Makoto Kudo ◽  
Kiyoshi Ouchi ◽  
Jun-ichi Kasai ◽  
Tomoyoshi Mishima
Keyword(s):  
Quantum Wells ◽  
Lattice Strain ◽  
Type Ii ◽  
Long Wavelength ◽  
Gaas Substrates ◽  
Type Ii Quantum Wells

scholarly journals Mid-infrared photoluminescence from structures with InAs/GaSb type II quantum wells

2015 ◽  
Vol 643 ◽  
pp. 012078 ◽  
Author(s):  
A V Selivanov ◽  
I S Makhov ◽  
V Yu Panevin ◽  
A N Sofronov ◽  
D A Firsov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells

Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

2011 ◽  
Vol 33 (11) ◽  
pp. 1817-1819 ◽  
Author(s):  
G. Sęk ◽  
F. Janiak ◽  
M. Motyka ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells ◽  
Interband Cascade Lasers ◽  
Cascade Lasers ◽  
Loss Mechanisms
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