Time and real space dependence of impact ionization events in low noise impact avalanche transit time diodes

2003 ◽  
Vol 94 (6) ◽  
pp. 3897-3900 ◽  
Author(s):  
K. P. D. Lim ◽  
P. A. Childs ◽  
D. C. Herbert
Keyword(s):  
Transit Time ◽  
Impact Ionization ◽  
Real Space ◽  
Low Noise ◽  
Noise Impact ◽  
Space Dependence

Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates

2002 ◽  
Vol 14 (12) ◽  
pp. 1722-1724 ◽  
Author(s):  
S. Wang ◽  
J.B. Hurst ◽  
F. Ma ◽  
R. Sidhu ◽  
X. Sun ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Low Noise ◽  
Noise Impact ◽  
Inp Substrates

scholarly journals DEUFRABASE: A Simple Tool for the Evaluation of the Noise Impact of Pavements in Typical Road Geometries

Environments ◽  
2019 ◽  
Vol 6 (3) ◽  
pp. 27 ◽  
Author(s):  
Michel Bérengier ◽  
Judicaël Picaut ◽  
Bettina Pahl ◽  
Denis Duhamel ◽  
Benoit Gauvreau ◽  
...  
Keyword(s):  
Traffic Noise ◽  
Emission Spectra ◽  
Low Noise ◽  
Noise Emission ◽  
Simple Method ◽  
Acceptable Error ◽  
The Road ◽  
Noise Impact ◽  
On The Road ◽  
The Impact

Traffic noise is considered by people as one of the most important sources of environmental discomfort. A way to limit the traffic noise is to reduce the noise emission, for example, by using specific low noise pavements, particularly in suburban areas. However, in real situations, it can be difficult to evaluate the impact of a given pavement, because it depends, for example, on the road geometry, the meteorological conditions, or the distance of the receiver position. Finally it can be difficult to select the most appropriate pavement for a given noise reduction objective. In this paper, a simple method is proposed to evaluate the noise impact of a pavement, in typical road geometries and environmental conditions. The proposed approach uses two databases, the first one based on measurements of emission spectra of road vehicles on several typical pavements, the second one made of pre-calculations of noise propagation for typical road configurations. Finally, the method is implemented in an interactive web tool, called DEUFRABASE, which allows one to obtain a fast estimation of the L Aeq (1 h or 24 h) and L den noise levels for various pavements and road configurations, as functions of the traffic flow and composition. By comparing the method with measurements, it is showed that the tool, although based on a restricted number of pavements and on several simplifications, can predict the noise impact of typical road configurations, with an acceptable error, most often less than 2 dB.

High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region

2005 ◽  
Vol 17 (8) ◽  
pp. 1719-1721 ◽  
Author(s):  
Ning Duan ◽  
Shuling Wang ◽  
Feng Ma ◽  
Ning Li ◽  
J.C. Campbell ◽  
...  
Keyword(s):  
High Speed ◽  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Low Noise

Structure Optimization Design of Vane Steering Pump

2014 ◽  
Vol 496-500 ◽  
pp. 904-907
Author(s):  
Lian Fu Yang
Keyword(s):  
Optimization Design ◽  
Structure Optimization ◽  
Low Noise ◽  
Transition Curve ◽  
Hydraulic Power ◽  
Power Steering ◽  
Fitting Method ◽  
Noise Impact ◽  
Curve Fitting Method ◽  
Hydraulic Power Steering

How to reduce or eliminate the noise of the vane steering pump is a key problem to use hydraulic power steering car to solve. After a lot of experiments and demonstration, the methods of adopting correct transition curve, and a large circular arc method, adopting low noise impact curve of eight times optimization design, and the advanced stator curve fitting method, are to be good solutions to the problem of the vane steering pump noise.

S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EF03 ◽  
Author(s):  
Wogong Zhang ◽  
Yuji Yamamoto ◽  
Michael Oehme ◽  
Klaus Matthies ◽  
Ashraful I. Raju ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Transit Time ◽  
Impact Ionization ◽  
Element Modelling ◽  
Lumped Element ◽  
S Parameter

HIGH SPEED RESONANT-CAVITY InGaAs/InAlAs AVALANCHE PHOTODIODES

2000 ◽  
Vol 10 (01) ◽  
pp. 327-337
Author(s):  
J. C. CAMPBELL ◽  
H. NIE ◽  
C. LENOX ◽  
G. KINSEY ◽  
P. YUAN ◽  
...  
Keyword(s):  
High Speed ◽  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Resonant Cavity ◽  
Multiple Quantum Well ◽  
Low Noise ◽  
Excess Noise ◽  
Multiple Quantum ◽  
Gain Bandwidth ◽  
Unity Gain

The evolution of long-haul optical fiber telecommunications systems to bit rates greater than 10 GB/s has created a need for avalanche photodiodes (APDs) with higher bandwidths and higher gain-bandwidth products than are currently available. It is also desirable to maintain good quantum efficiency and low excess noise. At present, the best performance (f3dB ~ 15 GHz at low gain and gain-bandwidth product ~ 150 GHz) has been achieved by AlInAs/InGaAs(P) multiple quantum well (MQW) APDs. In this paper we report a resonant-cavity InAlAs/InGaAs APD that operates near 1.55 μm. These APDs have achieved very low noise (k equivalent to 0.18) as a result of the very thin multiplication regions that were utilized. The low noise is explained in terms of a new model that accounts for the non-local nature of impact ionization. A unity-gain bandwith of 24 GHz and a gain-bandwidth-product of 290 GHz were achieved.

scholarly journals Low Noise Short Wavelength Infrared Avalanche Photodetector Using SB-Based Strained Layer Superlattice

Photonics ◽  
2021 ◽  
Vol 8 (5) ◽  
pp. 148
Author(s):  
Arash Dehzangi ◽  
Jiakai Li ◽  
Manijeh Razeghi
Keyword(s):  
Short Wavelength ◽  
Room Temperature ◽  
Molecular Beam ◽  
Impact Ionization ◽  
Low Noise ◽  
Excess Noise ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
Strained Layer Superlattice ◽  
Ionization Coefficients

We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy on a GaSb substrate. At room temperature, the device exhibits a 50% cut-off wavelength of 1.74 µm. The device was revealed to have an electron-dominated avalanching mechanism with a gain value of 48 at room temperature. The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device. Low excess noise, as characterized by a carrier ionization ratio of ~0.07, has been achieved.

scholarly journals Nanomilling and STEM Imaging of Sub-50 nm InP HEMT

2021 ◽  
Author(s):  
Besmeh F. Raya
Keyword(s):  
Electron Microscope ◽  
Impact Ionization ◽  
Ion Beam ◽  
Failure Mechanisms ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Atomic Scale ◽  
High Electron ◽  
Noise Amplifier ◽  
Microscopy Techniques

Abstract The sub-50 nm Indium Arsenide Composite Channel (IACC) High Electron Mobility Transistors (HEMTs) are fabricated on 100 mm Indium Phosphide (InP) substrates. This technology offers the best performance for low-noise and high-frequency, space and military applications. Typical failure mechanisms are observed in III-V HEMT technologies, including gate sinking, impact ionization and electromigration. Experiments were conducted to understand failure mechanisms of the IACC HEMTs by life testing devices at accelerated temperatures and biases; their electrical characteristics were measured at each stress interval. In order to determine which devices and where any defects occurred after the accelerated life tests, an additional test was completed, a Low-Noise Amplifier (LNA) Circuit assessment. The Low-Noise Amplifier (LNA) Circuit assessment determines which HEMT device is the weakest amongst the LNA circuit. Since many of the known III-V semiconductor failure mechanisms physically degrade or damage HEMTs, cross-sections are important to prepare to detect these mechanisms. In this presentation, advanced microscopy techniques with sub-nanometer resolutions, will examine physical characteristics of the HEMT at the atomic scale. The microscopy techniques will include a Focused Ion Beam/Scanning Electron Microscope (FIB/SEM), Nanomill and a Transmission Electron Microscope (TEM) along with Energy Dispersive Spectroscopy (EDS).

scholarly journals New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1497
Author(s):  
Mohamed Fauzi Packeer Mohamed ◽  
Mohamad Faiz Mohamed Omar ◽  
Muhammad Firdaus Akbar Jalaludin Khan ◽  
Nor Azlin Ghazali ◽  
Mohd Hendra Hairi ◽  
...  
Keyword(s):  
Band Gap ◽  
Breakdown Voltage ◽  
Impact Ionization ◽  
High Mobility ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Gate Length ◽  
High Electron ◽  
Gate Leakage ◽  
The Impact

Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-frequency devices, which operate at room temperature. The major drawbacks of conventional pHEMT devices are the very low breakdown voltage (<2 V) and the very high gate leakage current (∼1 mA/mm), which degrade device and performance especially in monolithic microwave integrated circuits low-noise amplifiers (MMIC LNAs). These drawbacks are caused by the impact ionization in the low band gap, i.e., the InxGa(1−x)As (x = 0.53 or 0.7) channel material plus the contribution of other parts of the epitaxial structure. The capability to achieve higher frequency operation is also hindered in conventional InGaAs/InAlAs/InP pHEMTs, due to the standard 1 μm flat gate length technology used. A key challenge in solving these issues is the optimization of the InGaAs/InAlAs epilayer structure through band gap engineering. A related challenge is the fabrication of submicron gate length devices using I-line optical lithography, which is more cost-effective, compared to the use of e-Beam lithography. The main goal for this research involves a radical departure from the conventional InGaAs/InAlAs/InP pHEMT structures by designing new and advanced epilayer structures, which significantly improves the performance of conventional low-noise pHEMT devices and at the same time preserves the radio frequency (RF) characteristics. The optimization of the submicron T-gate length process is performed by introducing a new technique to further scale down the bottom gate opening. The outstanding achievements of the new design approach are 90% less gate current leakage and 70% improvement in breakdown voltage, compared with the conventional design. Furthermore, the submicron T-gate length process also shows an increase of about 58% and 33% in fT and fmax, respectively, compared to the conventional 1 μm gate length process. Consequently, the remarkable performance of this new design structure, together with a submicron gate length facilitatesthe implementation of excellent low-noise applications.

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