scholarly journals Alternating current conduction properties of thermally evaporated α-nickel phthalocyanine thin films: Effects of oxygen doping and thermal annealing

2003 ◽  
Vol 94 (4) ◽  
pp. 2426-2433 ◽  
Author(s):  
Thomas D. Anthopoulos ◽  
Torfeh S. Shafai
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Alternating Current ◽  
Oxygen Doping ◽  
Nickel Phthalocyanine ◽  
Current Conduction ◽  
Conduction Properties

Improved Electrical Conduction Properties in Unintentionally-doped ZnO Thin Films Treated by Rapid Thermal Annealing

2011 ◽  
Vol 59 (4) ◽  
pp. 2774-2777 ◽  
Author(s):  
Youngmin Lee ◽  
Choeun Lee ◽  
Eunhee Shim ◽  
Eiwhan Jung ◽  
Jinyong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electrical Conduction ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Conduction Properties

Direct current conduction properties of sputtered Pt/(Ba0.7Sr0.3)TiO3/Pt thin films capacitors

1995 ◽  
Vol 66 (22) ◽  
pp. 2975-2977 ◽  
Author(s):  
W. Y. Hsu ◽  
J. D. Luttmer ◽  
R. Tsu ◽  
S. Summerfelt ◽  
M. Bedekar ◽  
...  
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Current Conduction ◽  
Conduction Properties

Analysis of Alternating Current Conduction and Impedance Spectroscopy Study of BaBi2Nb2O9 Thin Films

2001 ◽  
Vol 688 ◽  
Author(s):  
Apurba Laha ◽  
S. Saha ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Ac Conductivity ◽  
Impedance Analysis ◽  
Alternating Current ◽  
Imaginary Component ◽  
Impedance Spectroscopy Study ◽  
Wide Range ◽  
Current Conduction ◽  
Different Temperatures ◽  
Electrode Interface

AbstractAlternating current conduction in BaBi2Nb2O9 (BBN) thin films has been studied over a wide range of temperatures and frequencies. A power law relation was used to explain the frequency dependence of ac conductivity. In the higher frequency region, ac conductivity of the BBN thin films was temperature independent. The activation energy calculated from the Arrhenius plot of ac conductivity was found to be around 0.25 eV. It was attributed to shallow trap controlled space charge conduction in the bulk of the sample. The impedance analysis of the BBN thin films was also performed to gain insight into the microstructure of the films, including the characteristics of the grains, grain boundaries, and film-electrode interface. The response of a single RC combination has been observed for our case. The effect of other components, such as the grain boundary interface and electrode/film interface was negligible. The imaginary component of impedance (Z”) exhibited different peak maxima at different temperatures. A Debye mechanism was found to be appropriate to explain the polarization relaxation in BBN thin films.

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

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